A molecular precursor route to quaternary chalcogenide CFTS (Cu₂FeSnS₄) powders as potential solar absorber materials

Abstract

In the present work we report on the synthesis of tetragonal stannite Cu 2 FeSnS 4 powders using a solvent free melt method using a mixture of Cu, Fe, and Sn(II)/Sn(IV) O-ethylxanthates heated at different temperatures. The as-synthesized powders were characterized by powder X-ray diffraction (p-XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), UV-Vis absorption spectroscopy, scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy, which confirm the successful synthesis of stannite CFTS. Optical measurements show that Cu 2 FeSnS 4 powders have visible light absorption onsets in the far red with direct band gap energies in the range 1.32-1.39 eV which are suitable for acting as efficient absorber layers in solar cells. Electronic characterisation of these materials deposited as thin films by spin coating show that they are p type semiconductors with respectable carrier mobilities of ca. 60 cm 2 V À1 s À1 with carrier densities on the order of 10 14 cm À1 .

Stannites – A New Promising Class of Durable Electrocatalysts for Efficient Water Oxidation

“…The Cu 2p, Fe 2p, Sn 3d and S 2p spectra (see Figure S5) exhibit the expected oxidation states of Cu I , Fe II , Sn IV and S −II with minor amounts of Cu II and a significant amount of S IV caused by surface oxidation. These data are consistent with those reported for Cu 2 FeSnS 4 in the literature …”

“…Its basis is the cubic diamond structure and all atoms are coordinated tetrahedrally by their closest neighbors. Stannites have been intensively investigated, due to their application as thin film solar cells . In this regard, comprehensive efforts have been undertaken to fabricate thin films thereof .…”

“…Stannites have been intensively investigated, due to their application as thin film solar cells. [53][54][55][56] In this regard, comprehensive efforts have been undertaken to fabricate thin films thereof. [57][58][59] This expertise could be used to realize stannite-based electrodes and to probe the material for its OER suitability.…”

Paul O'Brien. 22 January 1954—16 October 2018

“…Through the use of alloying, the band gap energy of Bi 2−2x Sb 2x S 3 solids can be tuned as a function of the Sb mole fraction in a pseudo linear manner between ca 1.6 and 2.2 eV. Further examples of this approach to ternary materials include the production of M 2−2x In 2x S 3 (where M = Bi or Sb) by the use of In xanthates in tandem with either the Bi or Sb xanthates (30). The latter systems may be useful for tuning carrier concentration for thermoelectric applications.…”

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

“…Refractive index versus wavelength λ of CNTS thin films Optical Extinction coefficient versus wavelength λ of Cu 2 NiSnS 4 thin films Real dielectric constant of quaternary CNTS thin films Imaginary dielectric constant of deposited CNTS thin filmsTable 4: Values of some optical parametes of Cu 2 NiSnS 4 absorber materials in the wavelength λ 800 nmThe optical conductivity parameter (σ opt ) is a determination of the frequency response of the compound thin layer material when presented to electromagnetic light; "σ opt " is allied to the refractive index (n) and optical absorption coefficient (α) by following equation(11) [50].…”