A modified microstrip to empty substrate integrated waveguide transition

Khan, Arani Ali; Kahar, Manisha; Mandal, Mrinal Kanti

doi:10.1002/mmce.22990

Cited by 2 publications

(3 citation statements)

References 14 publications

(38 reference statements)

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“…Moreover, transition is shorter than those proposed in [7] and [13], of similar length to the solution in [9], and has a higher length than the others. Finally, the manufacturing process is easier than those used in [5], [9] and [13]; and similar to those described in [7], [8] and [10]. All things considered, this transition is the most suitable one to manufacture devices independently of the operating frequency band.…”

Section: Back-to-back Prototypementioning

confidence: 92%

“…The transition proposed in [9] modifies the solution of [7] using a tapered artificial dielectric slab matrix, reducing the area of the transition, but the cost and complexity of the transition is increased due to the manufacturing process of the rectangular metallic rods in the aluminum plate to create the artificial dielectric slab. The last solution has been recently proposed in [10] with a tapered microstrip transition between the 50 Ω microstrip line and ESIW for impedance and mode matching. The problem of this transition is that the radiation losses are even higher (an 8%) than those for the solution presented in [7].…”

Section: Introductionmentioning

confidence: 99%

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Improved Microstrip-to-ESIW Transition With Elliptical Dielectric Taper in Ku- and Ka-Bands

et al. 2022

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Empty Substrate Integrated Waveguide (ESIW) technology preserves the many advantages of the Substrate Integrated Waveguide (SIW) such as low cost, low profile, and easy integration with Printed Circuit Boards (PCBs). Moreover, it has additional advantages due to the avoidance of dielectric filling: lower insertion losses and resonators with higher quality factor. In order to connect the ESIW line to classical planar lines, the design of transitions becomes specially important. Due to this, some microstrip-to-ESIW transitions have been published in recent years. Problems of these transitions are usually the complexity of the manufacturing process or increased radiation losses. Knowing the aforementioned disadvantages of the published solutions, in this paper, the transition with an expanded ESIW section has been improved, by adding an easy-to-manufacture dielectric taper that minimizes the undesired radiation losses. Additionally, the new proposed transition can be mechanized easier than previous solutions based on sharp tapers. Moreover, the slight overlap between the microstrip line and the upper ESIW metal cover has been avoided, thus enhancing the return losses of the proposed transition. To validate the proposed transition, two backto-back prototypes have been manufactured both in Ku-and Ka-band, obtaining insertion losses lower than 0.31 dB and return losses higher than 20.8 dB in Ku-band, and insertion losses lower than 1.36 dB and return losses higher than 14.75 dB in Ka-band.INDEX TERMS Empty Substrate Integrated Waveguide (ESIW), microstrip, transition, elliptical taper, millimeter-waves systems, Ku-band, Ka-band.

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Section: Back-to-back Prototypementioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Improved Microstrip-to-ESIW Transition With Elliptical Dielectric Taper in Ku- and Ka-Bands

et al. 2022

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“…Another solution consists of using a through-wire from the microstrip line to excite the ESIW resulting in is a very versatile transition [9]. The last transition proposed use a tapered microstrip transition between the 50 Ω microstrip line and the ESIW for impedance and mode matching [10].…”

Section: Introductionmentioning

confidence: 99%

Through-Wire Microstrip-to-Empty-Substrate-Integrated-Waveguide Transition at Ka-Band

Ballesteros,

Belenguer,

Fernandez

et al. 2023

Applied Sciences

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The advantages of the Substrate-Integrated Waveguide (SIW) in terms of low profile, integration with Printed Circuit Board (PCB) and low cost are maintained by the Empty Substrate-Integrated Waveguide (ESIW). Moreover, as the dielectric fill is avoided, other advantages are also added: resonators with higher quality factor and lower insertion losses. Since 2014, when it was proposed, several devices for X-band to Ka-band applications have been accurately designed and manufactured. In this way, transitions are one of the most important components, as they allow the connection between the ESIW and other planar transmision lines such as microstrip. To accomplish this aim, different transitions have been proposed in the literature: based on sharp dielectric tapers combining metallized and non-metallized parts, which increases the manufacture complexity; with a broadened ESIW section, that is less complex at the cost of increasing reflection and radiation losses due to the abrupt discontinuity; based on tapered artificial dielectric slab matrix, more difficult to mechanize; using a tapered microstrip transition, with high radiation losses; and even transitions for multilayer devices. Among all the transitions, the most versatile one is the through-wire transition, as microstrip and ESIW can be implemented in different layers and allows any feeding angle between the microstrip line and the ESIW. In this paper the through-wire transition has been properly validated at Ku- and Ka-bands. Moreover, a back-to-back transition has been accurately manufactured in Ka-band with measured insertion losses lower than 3.7 dB and return losses higher that 11.7 dB, concluding that the transition is not frequency dependent.

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A modified microstrip to empty substrate integrated waveguide transition

Cited by 2 publications

References 14 publications

Improved Microstrip-to-ESIW Transition With Elliptical Dielectric Taper in Ku- and Ka-Bands

Improved Microstrip-to-ESIW Transition With Elliptical Dielectric Taper in Ku- and Ka-Bands

Through-Wire Microstrip-to-Empty-Substrate-Integrated-Waveguide Transition at Ka-Band

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