1999
DOI: 10.1088/0022-3727/32/15/314
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A model of capacitively coupled radio-frequency methane/hydrogen plasmas for III-V semiconductor etching applications

Abstract: A model has been developed which follows electrons and ions through assumed time varying potentials in a radio-frequency methane/hydrogen plasma. The system modelled is relevant to a low-pressure (10-90 mTorr) plasma used in the etching of GaAs surfaces. To understand the etching process, a knowledge of the flux and energy distributions of all species at the surface is required and as a first stage it is necessary to derive the spatial ionization distribution function. Inelastic and elastic collisions with neu… Show more

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Cited by 4 publications
(4 citation statements)
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“…Taking into account the processes described in the phenomenological model [4], the double hump shape of the IEDs can be explained. The model is referring to a large range of bias voltages (up to 500 V) which leads to a multi-peak distribution.…”
Section: Resultsmentioning
confidence: 99%
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“…Taking into account the processes described in the phenomenological model [4], the double hump shape of the IEDs can be explained. The model is referring to a large range of bias voltages (up to 500 V) which leads to a multi-peak distribution.…”
Section: Resultsmentioning
confidence: 99%
“…In highly asymmetric rf discharges with a large electrode area ratio the ion bombardment is confined to the smaller electrode (called the 'cathode'), which exhibits a large negative self-bias voltage almost approaching the amplitude of the rf signal. The particle fluxes upon the cathode from an rf discharge were intensively studied [1][2][3][4][5]. Investigations undertaken for two distinctive cases showed that:…”
Section: Introductionmentioning
confidence: 99%
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“…If we want our consideration to be more exact, then we should take into account the dependence of the cross section Q ex (λ) and τ av on the particle energy and the energy structure of fluxes J (x). These problems are considered by Layberry et al [14] where useful formulae are proposed. The above dependences limit the analytical assessment of the I (λ, x, x).…”
Section: General Treatment Of the Cathode Zone Lightingmentioning
confidence: 99%