A model noise temperature for nonlinear transport in semiconductors

Abstract

We present an analytical modeling of the noise temperature associated with velocity fluctuations obtained in the framework of the linear-response theory around a steady state. The expressions are rigorously related to an eigenvalue expansion of the response matrix and are applicable to ohmic as well as to nonohmic ͑hot-carrier͒ conditions. Theory requires as input parameters the reciprocal carrier effective mass, the drift velocity, the carrier energy, the variance of velocity fluctuations, and the covariance of velocity-energy fluctuations as functions of the electric field in stationary and homogeneous conditions. The analytical results obtained for the case of holes in Si and electrons in GaAs at Tϭ300 K are validated by comparison with experiments.

Monte Carlo calculation of electronic noise under high-order harmonic generation

“…The significant enhancement of S ␦␦ () with respect to the static spectrum in the low-frequency region is mainly due to the partial cutoff of intervalley transitions in the high-frequency periodic field which are responsible for the spectrum suppression. 7 Finite Fourier transformation ͑FT͒ approach. In the framework of the finite FT determined in the time interval 0рtрT, the spectral density of velocity response is defined as S ͑ n ͒ϭ lim T→ϱ 2T͗g͑ n ͒g*͑ n ͒͘, ͑4͒…”

An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors

“…he dynamic mobility may be calculated in the framework of the linear response formalism using the following relation [5]:…”

An extended drift-diffusion model of semi-insulating n-GaAs Schottky-barrier diodes

“…Mobility, diffusivity, electron effective mass, average kinetic energy and thermal velocity are taken to depend on the local electric field according to Monte Carlo data obtained for the bulk material [9,10]. These parameters, normalized to their values at zero electric field, are shown in figures 1 to 4 as a function of the electric field.…”