A model for the photostructural changes in amorphous chalcogenides

Shimakawa, K.; Yoshida, Norimitsu; Ganjoo, Ashtosh; Kuzukawa, Y.; Singh, Jai

doi:10.1080/095008398178598

Cited by 93 publications

(44 citation statements)

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“…It means the probability of photo-induced bond breaking in a-As 2 S 3 film is much higher than that for a-As 2 Se 3 film. As a result, it has been concluded in [2] that photo-darkening in a-As 2 S 3 is accompanied by changes in short-range order interactions, while photo-darkening in a-As 2 Se 3 is accompanied rather by changes in Coulomb interactions in an agreement with "slip motion of the layers" model introduced by Shimakawa et al [3]. The estimated probability for a-As 2 S 3 corresponds to the existence of concentration of defects at the level less than 1% of all atomic sites.…”

Section: Introductionsupporting

confidence: 67%

Radiation/annealing-induced structural changes in GexAs40-xS60 glasses as revealed from high-energy synchrotron X-ray diffraction measurements

Kavetskyy¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Local atomic structure of Ge x As 40x S 60 glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after -irradiation states by using the high-energy synchrotron X-ray diffraction technique. The accumulated dose of 2.41 MGy is chosen to be close to the known in literature focal point (2.0 MGy) for the system tested, at which the -irradiation-induced optical (darkening) effect does not depend on the composition. It is established that the first sharp diffraction peak (FSDP) is located at around 1 Е 1 . 1  in the structure factors S(Q) of all the alloys studied. The FSDP position is found to be constant on radiation/annealing treatment, but the intensity of the FSDP reveals changes under irradiation/annealing only for the compositions with x = 16 and 24. The radiation/annealing-induced changes are also observed on the pair distribution functions in the first and second coordination shells for these compounds. Practically invisible effects on the FSDP and pair distribution functions are found for the alloys with x = 32 and 36. The radiation/annealing-induced structural changes detected mainly in the S As  sub-system of the glasses examined are well explainable within the Tanaka approach for interpretation of the photo-induced structural changes and related phenomena in As 2 S 3 chalcogenide glass and similar materials.

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Section: Introductionsupporting

confidence: 67%

Radiation/annealing-induced structural changes in GexAs40-xS60 glasses as revealed from high-energy synchrotron X-ray diffraction measurements

Kavetskyy¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Following these ideas, we envisage that polaritons or plasmons are responsible for the parallel energy flow in Se. The energy flow may cause an anisotropic volume expansion through some mechanisms such as Coulombic explosions [24,25], which appear through the photoinduced fluidity as the parallel elongation.…”

Section: Discussionmentioning

confidence: 99%

Photoinduced vector deformations of semi‐freely fixed glassy As‐S(Se)

Tanaka

Mikami

2011

Phys. Status Solidi C

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The chalcogenide glass is known to exhibit a variety of vector photo‐deformations. The present work studies the deformation in glassy As‐S(Se) films and flakes, which are laid on viscous grease layers. Upon bandgap illumination of linearly polarized cw laser light, the film and flake exhibit anisotropic wrinkles and extensions, respectively, while the directions change with the composition. As2S(Se)3 samples deform in the direction orthogonal to the electric field of the light, but pure Se deforms in parallel to the electric field. And, in the As‐Se system, an orthogonal‐parallel directional change appears at the As content of ∼1 at.%. X‐ray diffraction and Raman‐scattering spectroscopy detect no anisotropic atomic changes. The orthogonal deformation has been ascribed to optical pressure, while the parallel in Se may be triggered by polariton‐plasmon waves. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…SiO2 exhibits the so-called radiation compaction [52], while GeS2 undergoes the volume expansion [53], which is common to the most of covalent chalcogenide glasses [54,55]. Tanaka has proposed that the different volume changes in SiO2 and GeS2 can be interpreted using a relative glass density [54], which can be evaluated as a density ratio R ρ =ρg /ρc (< 1), where ρg and ρc are the glass density and the density of a corresponding crystal.…”

Section: Comparisonmentioning

confidence: 99%

Photo-induced phenomena in GeO2 glass

Terakado

Tanaka

2006

Journal of Non-Crystalline Solids

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Photo-induced changes in GeO2 glass have been studied in optical and structural properties. Band-gap excitation gives rise to modifications in mid-gap optical absorption and photo-luminescence spectrum. It also produces electron-spin signals at g ≃ 1.995 and 2.008.Raman-scattering spectrum becomes sharper, x-ray diffraction patterns show disappearance of a crystalline peak, and illuminated surfaces expand. These observations can be accounted for by assuming bond transformations from rutile-like to defective quartz-like structures and/or from small to large rings. These photo-induced changes in GeO2 are comparatively discussed with those in SiO2 and GeS2.

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A model for the photostructural changes in amorphous chalcogenides

Cited by 93 publications

References 0 publications

Radiation/annealing-induced structural changes in GexAs40-xS60 glasses as revealed from high-energy synchrotron X-ray diffraction measurements

Radiation/annealing-induced structural changes in GexAs40-xS60 glasses as revealed from high-energy synchrotron X-ray diffraction measurements

Photoinduced vector deformations of semi‐freely fixed glassy As‐S(Se)

Photo-induced phenomena in GeO2 glass

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