A model for the formation of amorphous Si by ion bombardment

Morehead, F. F.; Crowder, B. L.

doi:10.1080/00337577008235042

Cited by 464 publications

(108 citation statements)

References 10 publications

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“…Heterogeneous nucleation of the amorphous phase may result when an ion impact causes a sufficiently high localdefect density to render a small region amorphous. [1][2][3][4] For large energy-deposition densities, this may occur for a single ion impact. As ion fluence further increases, these zones accumulate and overlap to form a continuous amorphous layer.…”

mentioning

confidence: 99%

Annealing of isolated amorphous zones in silicon

Donnelly

Birtcher

Vishnyakov

et al. 2003

Applied Physics Letters

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In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 °C. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 °C to more than 400 °C. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability.

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mentioning

confidence: 99%

Annealing of isolated amorphous zones in silicon

Donnelly

Birtcher

Vishnyakov

et al. 2003

Applied Physics Letters

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“…It is known that C implants do not lead to dislocation formation during annealing, and can even suppress the expected dislocation formation from co-implanted ions [5][6][7][8][9][10][11][12][13][14]. However, it is not known why dislocations are suppressed by carbon.…”

Section: Carbon Implantsmentioning

confidence: 99%

“…These secondary defects can be detrimental to device performance. Therefore, much effort has been put into determining when or how these dislocations form [4,[6][7][8][9]. In particular, it has been demonstrated for room temperature (RT) implants that dislocations are present after annealing only if more than a critical number of atoms have been displaced by the implant [6].…”

Section: Introductionmentioning

confidence: 99%

Time evolution of dislocation formation in ion implanted silicon

Liefting¹,

Custer²,

Saris³

1994

Materials Science and Engineering: B

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Annealing of crystal damage from ion implantation may restflt in dislocation formation. Here we study the nucleation, growth, and annihilation of such dislocations during rapid thermal anneals of Si, Ge, As, and In implanted Si. The dislocation formation process is observed for single or multiple damage profiles, as well as in amorphous-crystal transition regions. Dislocations initially nucleate in all these cases, even if they eventually annihilate during further annealing. It is also shown that for C implants in Si not only do dislocations not remain after annealing, but they do not even nucleate.

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“…In the heterogeneous model, amorphization is assumed to occur initially in the cylindrical region around each ion path. 29 The continuous amorphous layer is formed due to sufficient overlap of the Fig. 1), respectively.…”

Section: B Rapid Thermal Annealingmentioning

confidence: 99%

Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry

Kurihara

Hikino

Adachi

2004

Journal of Applied Physics

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The optical properties of N + ion-implanted Si͑100͒ wafers have been studied using the spectroscopic ellipsometry (SE). The N + ions are implanted at 150 keV with fluences in the range between 1 ϫ 10 16 and 7.5ϫ 10 16 cm −2 at room temperature. A Bruggeman effective-medium-approximation and a linear-regression analysis require a four-phase model (substrate/first and second damaged layers/ambient) to explain the experimental data of the as-implanted samples. These analyses suggest that the buried fully amorphous layer can be formed at around ϳ5 ϫ 10 16 cm −2 dose. The rapid thermal annealing is performed at 750°C in a dry N 2 atmosphere on N + ion-implanted samples. The SE data reveal that the recrystallization starts to occur very quickly. The time constant for the defect annealing in the deeper damaged layer is determined to be 36 s. The dielectric-function spectra ͑E͒ of microcrystalline silicon deduced here differ appreciably from that of the single-crystalline silicon, especially in the vicinity of the critical points.

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A model for the formation of amorphous Si by ion bombardment

Cited by 464 publications

References 10 publications

Annealing of isolated amorphous zones in silicon

Annealing of isolated amorphous zones in silicon

Time evolution of dislocation formation in ion implanted silicon

Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry

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