A Model for Current‐Voltage Oscillations at the Silicon Electrode and Comparison with Experimental Results

Carstensen, J.; Prange, R.; Föll, H.

doi:10.1149/1.1391734

Cited by 91 publications

(77 citation statements)

References 19 publications

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“…4). In this regime, a detailed Monte Carlo study [5,6,7] including the lateral interaction between Current Bursts (overlap of the oxide humps of neighboring Current Bursts) has shown that the Current Burst Model quantitatively can explain the experimental observations of globally oscillating etching current. Due to a phase synchronization of neighboring Current Bursts oxide domains are formed.…”

Section: Smoothing Effect Of Oxide Layers and Global Current Oscillatmentioning

confidence: 99%

“…1) in diluted HF is quite complicated and exhibits two current peaks and strong currentor voltage oscillations at large current densities (for reviews see [2,3]). These oscillations have been decribed quantitatively by the Current-Burst-Model [4,5,6,7]. The IV-characteristics of the siliconhydrofluoric acid contact shows different phenomena from generation of a porous silicon layer (PSL), oxidation and electropolishing (OX) and electrochemical oscillations at higher anodic bias.…”

Section: Introductionmentioning

confidence: 99%

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Self-organized pore formation and open-loop control in semiconductor etching

Claussen

Carstensen

Christophersen

et al. 2003

Chaos: An Interdisciplinary Journal of Nonlinear Science

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Electrochemical etching of semiconductors, apart from many technical applications, provides an interesting experimental setup for self-organized structure formation capable e.g. of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the CurrentBurst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); the properties and interactions between CB's are described by a number of material-and chemistry-dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies. These morphologies cannot be influenced only by the current, by chemical, material and other etching conditions, but also by an open-loop control, triggering the time scale given by the oxide dissolution time. With this method, under conditions where only branching pores occur, the additional signal hinders side pore formation resulting in regular pores with modulated diameter.

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Section: Smoothing Effect Of Oxide Layers and Global Current Oscillatmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Self-organized pore formation and open-loop control in semiconductor etching

Claussen

Carstensen

Christophersen

et al. 2003

Chaos: An Interdisciplinary Journal of Nonlinear Science

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“…In [17,18] the first model capable of explaining the current/voltage oscillations in Si was given. Its key feature was the postulation of a spatially and temporally inhomogeneous current flow.…”

Section: Salient Features Of the Modelmentioning

confidence: 99%

“…Oxidation is rather isotropic and smoothes the area; no filling with mesopores is observed. The oxidation current burst ends as soon as the locally grown oxide is impenetrable to current in analogy to the oscillation model [17,18]. In this case, the process with a relatively large time constant is the dissolution of the oxide (depending mainly on HF concentration and temperature).…”

Section: Macropores In P-type Siliconmentioning

confidence: 99%

Pore formation mechanisms for the Si-HF system

Carstensen

Christophersen

Föll

2000

Materials Science and Engineering: B

142

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A model is presented with the potential to account for all processes of the reactive Si -liquid interface including, e.g., current oscillations, and the formation of nano-, meso, and macropores with their specific dependence on crystal orientation. The model assumes that current flow is spatially and temporally inhomogeneous -current thus flows in current "lines" occurring in current "bursts". The mean cycle time between correlated current bursts is mostly given by the kinetics of oxide dissolution and hydrogen passivation (which introduces a strong surface orientation dependence). Structure generation at the Si electrode (current oscillations in the time domain or pore formation in the space domain) under these assumptions is a self-organized process resulting from an interplay of synchronizing and desynchronizing mechanisms. Synchronizing mechanisms always couple the nucleation of a new current burst in a specific area to the history of that area, desynchronizing mechanisms may also depend on the interaction of current burst. Examples for synchronizing mechanisms are enhanced nucleation probabilities on (100) surfaces, response to local oxides from another current burst, or coupling of current bursts by space charge region effects. Desynchronisation results, e.g., from quantum wire effects, or local reduction of reactants or potential by a current line. The model accounts qualitatively for most if not all observed phenomena, gives a number of quantitative relations, and makes numerous predictions.

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“…Electrochemical etching of silicon electrodes at different voltage conditions results in well pronounced porous structure in bulk silicon [1,2], as well as oxide layer formed on the surface [3,4]. Both structures find different applications.…”

Section: Introductionmentioning

confidence: 99%

Study of surface morphology of electrochemically etched n‐Si (111) electrodes at different anodic potentials

Jakubowicz

2003

Cryst. Res. Technol.

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Changes of n-Si (111) silicon surface morphology after anodisation at different voltage conditions in dilute NH 4 F solutions were studied by AFM technique. The electrochemical etching was done with respect to current-voltage (I-V) characteristics. The Si surface was investigated at increasing and constant voltage conditions. The porous silicon was formed at potentials slightly anodic from the rest potential (from -0.6 V to 0.02 V). On the other hand silicon oxide formation and electropolishing occurs at higher anodic potentials. The sustained current oscillations take place in the Si electrode, at 6 V potential in dilute NH 4 F solution. The nature of oscillations was attributed to cyclic silicon oxide formation and its dissolution. The surface undergoes from smooth (before oscillation peak) to rough (little before top of the peak) during oscillation peak, and finally transforms to smooth at the bottom of the peak. It was confirmed by the roughness parameter.

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A Model for Current‐Voltage Oscillations at the Silicon Electrode and Comparison with Experimental Results

Cited by 91 publications

References 19 publications

Self-organized pore formation and open-loop control in semiconductor etching

Self-organized pore formation and open-loop control in semiconductor etching

Pore formation mechanisms for the Si-HF system

Study of surface morphology of electrochemically etched n‐Si (111) electrodes at different anodic potentials

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