A Miniature High Gain and Broadband MMIC Distributed Amplifier

Deng, Kung-Li; Wang, Huei; Glaser, C.; Stubbs, M.G.

doi:10.1109/euma.2003.341028

Cited by 4 publications

(1 citation statement)

References 7 publications

(2 reference statements)

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“…Moreover, Virdee presented a reactively terminated CSSTWA where the output power and efficiency of the design were improved by using large‐signal impedance matching network . In addition to these individual cascaded designs, Deng et al made a study to compare performance metrics of the different cascaded structures .…”

Section: Introductionmentioning

confidence: 99%

A systematic design of 1.5-9 GHz high power-high efficiency two-stage GaAs PHEMT power amplifier

Sayginer

Yazgi

2014

Int J RF and Microwave Comp Aid Eng

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In this article, a systematic design approach for a Class‐A operated wideband power amplifier is presented. The power amplifier structure comprises of two transistors in the cascaded single stage traveling wave amplifier topology. A power amplifier was designed by using the systematic approach and fabricated with 0.25 μm GaAs PHEMT MMIC process. The amplifier has an area of 3.4 × 1.4 mm2. Measurement results show that almost flat gain performance is obtained around 15 dB over 1.5–9 GHz operating bandwidth. In most of the band, with the help of a wideband load‐pull matching technique, the amplifier delivers Po,sat and Po,1dB of around 30 dBm and 28 dBm where the corresponding power added efficiencies are >50% and >36%, respectively. It is shown that the proposed design approach has the advantage of simple and systematic design flow and it helps to realize step‐by‐step design for the designers. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:615–622, 2014.

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Section: Introductionmentioning

confidence: 99%

A systematic design of 1.5-9 GHz high power-high efficiency two-stage GaAs PHEMT power amplifier

Sayginer

Yazgi

2014

Int J RF and Microwave Comp Aid Eng

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Design of a DC-33 GHz cascode distributed amplifier using dual-gate device in 0.5-μm GaAs E/D-mode HEMT process

Chen

Shen

Weng

et al. 2013

2013 Asia-Pacific Microwave Conference Proceedings (APMC)

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A DC-to-82.4-GHz broadband amplifier using bandwidth extension technique in 0.15 µm pHEMT Process

Lin

Weng

Chang

et al. 2016

2016 Asia-Pacific Microwave Conference (APMC)

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A Miniature High Gain and Broadband MMIC Distributed Amplifier

Cited by 4 publications

References 7 publications

A systematic design of 1.5-9 GHz high power-high efficiency two-stage GaAs PHEMT power amplifier

A systematic design of 1.5-9 GHz high power-high efficiency two-stage GaAs PHEMT power amplifier

Design of a DC-33 GHz cascode distributed amplifier using dual-gate device in 0.5-μm GaAs E/D-mode HEMT process

A DC-to-82.4-GHz broadband amplifier using bandwidth extension technique in 0.15 µm pHEMT Process

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A Miniature High Gain and Broadband MMIC Distributed Amplifier

Cited by 4 publications

References 7 publications

A systematic design of 1.5-9 GHz high power-high efficiency two-stage GaAs PHEMT power amplifier

A systematic design of 1.5-9 GHz high power-high efficiency two-stage GaAs PHEMT power amplifier

Design of a DC-33 GHz cascode distributed amplifier using dual-gate device in 0.5-&#x03BC;m GaAs E/D-mode HEMT process

A DC-to-82.4-GHz broadband amplifier using bandwidth extension technique in 0.15 µm pHEMT Process

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Design of a DC-33 GHz cascode distributed amplifier using dual-gate device in 0.5-μm GaAs E/D-mode HEMT process