A DC-to-82.4-GHz broadband amplifier using bandwidth extension technique in 0.15 µm pHEMT Process

Lin, Yashen; Weng, Shou-Hsien; Chang, Hong-Yeh; Wang, Yu-Chi

doi:10.1109/apmc.2016.7931372

Cited by 1 publication

(2 citation statements)

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“…In addition, with the recent evolution of communication systems such as 5 G (Sub-6 GHz) and Wi-Fi 6/6E, a broadband gain amplifier including additional frequency bands is strongly required [1,2]. For bands from the near DC to the 5 GHz band, gain amplifiers using various techniques have been reported [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. However, it is not easy to keep the S 21 flatness for a wide frequency band due to the difficulty to realize the matching circuit for varying impedance over frequency.…”

Section: Introductionmentioning

confidence: 99%

“…They have excellent performance for broadband, but the chip area is very large, making it difficult to apply them to generalpurpose gain amplifiers. Another broadband amplifier has been reported to have high gain and wide frequency bands, simultaneously [10][11][12][13]. However, this generally leads to an increase in the chip size and circuit complexity, and high dc power consumption is required.…”

Section: Introductionmentioning

confidence: 99%

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A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process

Kim

Jhon

2021

Electronics

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This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. To ensure the robustness of the design, the amplifier had to consider the effects of the Electrostatic Discharge (ESD)-protected diode and the package, which can degrade the broadband performance. Therefore, the equivalent circuit models of the package and the ESD-protected diode were analyzed and simulated in this paper. The designed broadband gain amplifier from 50 MHz to 5 GHz frequency band has a die size of 700 μm × 1000 μm and consumes 156 mW of dc power, and it was simulated with a gain of 18.7 dB to 20.6 dB, a P1dB of 15.3 to 16.9 dBm, and a OIP3 of 26.5 to 31 dBm. Furthermore, the excellent gain flatness exhibited within 18.7 dB ± 1.92 dB at the interest of the frequency band.

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