A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Wu, Sheng; Ma, Xiaohua; Yang, Ling; Mi, Minhan; Zhang, Meng; Wu, Mei; Lu, Yang; Zhang, Hengshuang; Yi, Chupeng

doi:10.1109/led.2019.2909770

Cited by 27 publications

(8 citation statements)

References 21 publications

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“…In Figure 1 , a timeline of the semiconductor devices’ introduction is presented. Currently, the future of the semiconductor technology industry is looking into the utilization of semiconductor materials such as silicon-carbide (SiC), gallium nitride (GaN) and aluminum nitride (AlN) which have energy band gap of about 2 eV, 3.4 eV and 6.2 eV respectively, for manufacturing of power electronic devices [ 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 ]. These semiconductors have extremely high mechanical, chemical and thermal stability [ 67 , 68 ].…”

Section: Brief Historymentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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Section: Brief Historymentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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“…Linearity improvement at the device level has attracted considerable attention, and significant efforts have been made to enhance device linearity by applying double metal gates (DMGs), fin structures, and transitional recessed gate (TRG) structures and optimizing the epitaxial structure. [12][13][14][15][16][17][18][19][20][21][22][23] The transconductance (g m ) of GaNbased HEMTs decreases quickly with increasing gate voltage after reaching its peak value, which is considered a critical issue for the nonlinearity performance. [17,24] Nonzero derivatives (g 0 m , g 00 m ) of the small-signal DC gain (g m ) caused by the nonlinear nature of the device will produce a large third-order intermodulation amplitude (IMD3) in PAs.…”

Section: Introductionmentioning

confidence: 99%

Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications

Jia

Wang

Chen

et al. 2021

Physica Status Solidi (a)

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This article proposes a parallel dual‐metal‐gate structure (PDM) of AlGaN/GaN high‐electron‐mobility transistors (HEMTs) for high‐linearity applications. Cancellation of the third‐order derivative of the curve (is achieved by splitting the device into two subcells in parallel with different gate metals. The two subcells have different threshold voltages. When the same bias voltage is applied, the operating states of the two subcells are independently controlled by the gate bias voltages. The maximum transconductance () of the conventional single‐metal‐gate (SMG) HEMT, double‐metal‐gate (DMG) HEMT, and PDM‐HEMT is all comparable, whereas of the proposed structure is 75% lower than that of the SMG HEMT and 47.8% lower than that of the DMG HEMT. The effects of the differences and width ratios of the work function on are studied and compared, and a suitably designed PDM‐HEMT that can considerably improve linearity without degrading other performance aspects is obtained. This research has significant implications for high‐linearity applications.

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“…10) Therefore, to solve the linearity problem, it is essential to suppress the g m drop with increasing gate voltage. To obtain a flat g m curve, several structures such as Fin-HEMT structure, 11) double channel heterostructures, 12) PZT-gated MIS-HEMT 13) and transitional recessed gate (TRG) structures 14) have been proposed. For Fin-HEMT structures and double channel heterostructures, the mechanism is the suppression of source resistance increases in the drain current.…”

mentioning

confidence: 99%

“…Fig.3. (Color online) Benchmark of gate voltage swing (GVS) versus peak g m in the literature 13,14,[16][17][18][19][20][21][22][23]. …”

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confidence: 99%

Improving the transconductance flatness of InAlN/GaN HEMT by modulating V_T along the gate width

Zhang

et al. 2019

Appl. Phys. Express

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A modulated VT HEMT with improved gm flatness is demonstrated for high linearity application. The modulated VT HEMT was achieved by connecting two elements with different VT values in parallel along the gate width, realizing a flat resulting transfer curve, and the two different VT elements were fabricated by recessing part area of the barrier along the gate width under the gate region. The proposed HEMT shows a gate voltage swing as high as 5.4 V, a high drain current of approximately 2 A mm−1, and an fT/fmax of 63/125 GHz with a much flatter profile within the large gate voltage range.

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A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Cited by 27 publications

References 21 publications

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications

Improving the transconductance flatness of InAlN/GaN HEMT by modulating V_T along the gate width

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A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Cited by 27 publications

References 21 publications

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications

Improving the transconductance flatness of InAlN/GaN HEMT by modulating VT along the gate width

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Improving the transconductance flatness of InAlN/GaN HEMT by modulating V_T along the gate width