A method to evade silicon backside damage in deep reactive ion etching for anodically bonded glass–silicon structures

Matsuura, T.; Chabloz, M.; Jiao, Ji; Yoshida, Y.; Tsutsumi, Kazuhiko

doi:10.1016/s0924-4247(00)00547-1

Cited by 9 publications

(1 citation statement)

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“…However, such processing can cause variations by as much as 10 µm [ 14 , 15 , 16 ], which is unsuitable when the required precision is on the order of microns. One option for processing that can be realized with high precision and a high aspect ratio is deep reactive ion etching (DRIE) of silicon [ 17 , 18 , 19 , 20 ], used in anisotropic processing. DRIE is widely employed for producing dynamic random-access memories (DRAMs) and other devices.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Three-Dimensionally Deformable Metal Structures Using Precision Electroforming

et al. 2022

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It is difficult to fabricate three-dimensional structures using semiconductor-process technology, because it is based on two-dimensional layered structure fabrication and the etching of thin films. In this study, we fabricated metal structures that can be dynamically deformed from two-dimensional to three-dimensional shapes by combining patterning using photolithography with electroforming technology. First, a resist structure was formed on a Cu substrate. Then, using a Ni sulfamate electroforming bath, a Ni structure was formed by electroforming the fabricated resist structure. Finally, the resist structure was removed to release the Ni structure fabricated on the substrate, and electroforming was used to Au-plate the entire surface. Scanning-electron microscopy revealed that the structure presented a high aspect ratio (thickness/resist width = 3.5), and metal structures could be fabricated without defects across the entire surface, including a high aspect ratio. The metallic structures had an average film thickness of 12.9 µm with σ = 0.49 µm, hardness of 600 HV, and slit width of 7.9 µm with σ = 0.25 µm. This microfabrication enables the fabrication of metal structures that deform dynamically in response to hydrodynamic forces in liquid and can be applied to fields such as environmental science, agriculture, and medicine.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Three-Dimensionally Deformable Metal Structures Using Precision Electroforming

et al. 2022

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MEMS Processing and Fabrication Techniques and Technology—Silicon-Based Micromachining

Liu

Wang

2012

Microsystems and Nanotechnology

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The electrostatic-alloy bonding technique used in MEMS

Wang

Chen

2006

Front. Mech. Eng. China

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Electrostatic-alloy bonding of silicon wafer with glass deposited by Au to form Si/Au-glass water, and bonding of Si/Au-glass with silicon wafer were researched during fabrication of pressure sensors. The silicon wafer and glass wafer with an Au film resistor were bonded by electrostatic bonding, and then Si-Au alloy bonding was formed by annealing at 400˚C for 2 h. The air sealability of the cavity after bonding was finally tested using the N 2 filling method. The results indicate that large bond strength was obtained at the bonding interface. This process was used in fabricating a pressure sensor with a sandwich structure. The results indicate that the sensor presented better performances and that the bonding techniques can be used in MEMS packaging.

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A method to evade silicon backside damage in deep reactive ion etching for anodically bonded glass–silicon structures

Cited by 9 publications

References 1 publication

Fabrication of Three-Dimensionally Deformable Metal Structures Using Precision Electroforming

Fabrication of Three-Dimensionally Deformable Metal Structures Using Precision Electroforming

MEMS Processing and Fabrication Techniques and Technology—Silicon-Based Micromachining

The electrostatic-alloy bonding technique used in MEMS

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