A Method to Develop Critical Thinking: Playing the Devil’s Advocate

Gay, Sean Eric Kil Patrick

doi:10.46679/978819484836310

Development of Innovative Pedagogical Practices for a Modern Learning Experience 2021

DOI: 10.46679/978819484836310

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A Method to Develop Critical Thinking: Playing the Devil’s Advocate

Sean Eric Kil Patrick Gay¹

Abstract: The ability to think critically is at the foundation of an equitable and just society. One aspect of critical thinking (CT) is the ability to create and develop structurally sound arguments. Curricular requirements often restrict addressing this issue. Furthermore, students arguing their own opinions often assume agreement and therefore do not see a need to fully explain. As such, I examined how CT can be developed through the use of a timed-writing activity wherein the students argue against their own positio… Show more

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2023

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4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Dojima,

Dansako,

Maki

et al. 2023

SSP

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Developing an observation method for distributing sub-surface damage (SSD) on large-diameter 4H-SiC bulk wafers formed by mechanical processing can significantly improve the epitaxial and bulk growth processes. This study used a novel laser light scattering (LLS) technique to observe SSD distribution on a 6-inch 4H-SiC (0001) wafer. As a result, scattering intensity distributions similar to the grinding and lap-polishing traces and the shape of the jig used to hold the wafer during polishing were observed on the CMP-finished SiC wafer surface. Since the surface topography of the area was flat by a laser microscopy observation, it is assumed that this is the SSD. This result suggests that LLS can be a wafer inspection method that can observe SSD distribution. In addition, wafer inspection using LLS has demonstrated that it is possible to observe scratches, particles, and macrostep bunching. This method is anticipated to allow further optimization of the mechanical processing and thermal etching process prior to CVD epitaxial growth.

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4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Dojima,

Dansako,

Maki

et al. 2023

SSP

View full text Add to dashboard Cite

show abstract

Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility

Dojima,

Maki,

Dansako

et al. 2023

SSP

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Improving the visibility of defects in nitrogen-doped 4H-SiC (0001) bare wafers by photoluminescence imaging (PLI) is essential for improving the epitaxial growth process and device yields. This study proposes sub-surface damage (SSD) introduced during the mechanical process of SiC wafers as a new factor in reducing defect visibility in PL images. To verify the effect of SSD, we observed the surface of a SiC wafer, which was thermally etched at about 3 μm. As a result, dramatic defect visibility improvement was observed when the surface roughness was sufficiently flat (Ra < 0.3 nm) after thermal etching. Thus, the results suggest that defect visibility in PL images can be improved by controlling SSD and surface roughness. Using the background noise reduction effect of the SSD removal, not only PLI but also many other wafer surface inspections are expected to be improved.

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Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth

Toda

Dojima

Kojima³

et al. 2023

SSP

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It is known that basal plane dislocations (BPDs) and in-grown stacking faults (IGSFs) in the 4H-SiC epitaxial layer cause severe electrical degradation in SiC devices. The impact that sub-surface damage (SSD) on a production-grade 4H-SiC substrate with CMP-finished surface causes on both the BPD propagation and IGSF formation during epitaxial growth was investigated by Dynamic AGE-ing (DA). The substrates etched by DA sublimation etching to adjust the residual amount of SSD maintaining a smooth surface without macro step bunching were grown to observe BPD and IGSF density. The obtained results showed that these defect densities decreased exponentially with increasing etching depth. We demonstrated SSD introduced by mechanical processing led BPDs and IGSFs to extend or introduce to the epitaxial layer.

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A Method to Develop Critical Thinking: Playing the Devil’s Advocate

Cited by 3 publications

References 0 publications

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility

Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth

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