Abstract:A four layer GaAs-AI,Gal -,As heterostructure photoluminescence spectrum mcasurcd a t 77K has been compared with t,he results of investigations concerning the composition of this heterostrncture, performed by using the electron microprobc JXA-BOA. The application of photoluminescence irivcstigations of such heterostruct,ures as a simple and convcriient control method that can be used during the performance of a heterostructurc laser has been proposed.Das bei 77K gemessene Photolumineszenzspektrnm einer Viersch… Show more
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