A method for unified treatment of interface conditions suitable for device simulation

Abstract

A method is presented which allows for a unified treatment of interface conditions covering also both extreme cases, Diriichlet and Neumann boundary conditions. This unified treatment is especially useful if the type of the interface condition depends on the internal state of the device. The method is applied to a heterojunction interface where thermionic fieldemission and tunneling is assumed.

Mixed-mode device simulation

“…Thederivativesofthe flux term with respect to thesolutionvariablesmustbeofthe same magnitudeasthe other derivativesgiven by Ë in order to guarantee good conditioningof theresulting equationsystem [15].S incethis cannotgenerally be guaranteed,anapproach similartoDirichletinterfaces is preferable [63]:A dding (5.9)to(5.10) onegets…”