Mixed-mode device simulation

Grasser, T.; Selberherr, S.

doi:10.1016/s0026-2692(00)00083-5

Cited by 43 publications

(19 citation statements)

References 48 publications

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“…To date, the vast majority of the applications of PTC involve the solutions of discretized partial differential equations (PDEs). The method has proven successful in solving combustion-flow problems, 29 air foil modeling and optimization, 26,31 Poisson-Bolzmann equations, 32 circuit simulation, 33 and structural analysis. 30 It is important to acknowledge the distinction between PTC and HC; this is discussed in Appendix.…”

Section: Pseudo-transient Continuationmentioning

confidence: 99%

Equation‐oriented flowsheet simulation and optimization using pseudo‐transient models

2014

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Tight integration through material and energy recycling is essential to the energy efficiency and economic viability of process and energy systems. Equation-oriented (EO) steady-state process simulation and optimization are key enablers in the optimal design of integrated processes. A new process modeling and simulation concept based on pseudotransient continuation is introduced. An algorithm for reformulating the steady-state models of process unit operations as differential-algebraic equation systems that are statically equivalent with the original model is presented. These pseudo-transient models improve the convergence of EO process flowsheet simulations by expanding the convergence basin. This concept is used to build a library of pseudo-transient models for common process unit operations, and this modeling concept seamlessly integrates with a previously developed time-relaxation optimization algorithm. Two design case studies are presented to validate the proposed framework.The framework developed in this article consists of converting the algebraic model into a pseudo-transient process model with an equivalent steady-state solution, which can be obtained by a DAE time integration.The pseudo-transient models described above were implemented in gPROMS. 57 In the following sections, we 4116

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Section: Pseudo-transient Continuationmentioning

confidence: 99%

Equation‐oriented flowsheet simulation and optimization using pseudo‐transient models

2014

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“…In (5), L (u) is a nonlinear operator, typically coming from a nonlinear space approximation. Assuming small variations of the solution in time, a linearization of L can be performed:…”

Section: Nonlinear Problemsmentioning

confidence: 99%

“…where ∂ L/∂u is the Jacobian matrix of L and Δu := u n+1 − u n . By substituting (6) into (5) and neglecting higher order terms, we obtain…”

Section: Nonlinear Problemsmentioning

confidence: 99%

“…It was employed in [1] for solving the compressible Euler equations and in [2] for the incompressible Euler and Navier-Stokes equations. Other examples in which derivatives in pseudo time are used to solve systems of nonlinear equations include various engineering fields such as magnetohydrodynamics [3], simulations of launch environments [4] and electronics [5].…”

Section: Introductionmentioning

confidence: 99%

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Dual Time-Stepping Using Second Derivatives

Nordström

Ruggiu

2019

J Sci Comput

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We present a modified formulation of the dual time-stepping technique which makes use of two derivatives in pseudo-time. This new technique retains and improves the convergence properties to the stationary solution. When compared with the conventional dual time-stepping, the method with two derivatives reduces the stiffness of the problem and requires fewer iterations for full convergence to steady-state. In the current formulation, these positive effects require that an approximation of the square root of the spatial operator is available and inexpensive.

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“…To compare fairly the NMOSFET-and PMOSFETinduced characteristic fluctuation and eliminate the effect of transistor size on fluctuation, the dimensions of the PMOSFET were the same as those of the NMOSFET, and the absolute value of the nominal threshold voltages for both the NMOSFET and PMOSFET were 140 mV. In estimating circuit characteristics, since no well-established compact model of ultrasmall nanoscale devices is available, to capture the discrete-dopantposition-induced fluctuations, a coupled device-circuit simulation approach [29], [33], [41] is employed, as shown in Fig. 1(j).…”

Section: Nano-mosfet Circuit and Simulation Techniquementioning

confidence: 99%

Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies

Hwang

et al. 2010

IEEE Trans. Electron Devices

113

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This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and random-dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold-voltage fluctuation (σV th ); however, the WKF brings less impact on the gate capacitance and the cutoff frequency due to the screening effect of the inversion layer. The fluctuation of timing characteristics depends on the σV th and is therefore proportional to the trend of σV th . The power fluctuation consisting of the dynamic, short-circuit, and static powers is further investigated. The total power fluctuation for the planar MOSFET circuits is 15.2%, which is substantial in the reliability of circuits and systems. The static power is a minor part of the total power; however, its fluctuation is significant because of the serious fluctuation of the leakage current. For an amplifier circuit, the high-frequency characteristics, the circuit gain, the 3-dB bandwidth, the unity-gain bandwidth power, and the power-added efficiency are explored consequently. Similar to the trend of the cutoff frequency, the PVE and RDF dominate both the device and circuit characteristic fluctuations due to the significant gate-capacitance fluctuations, and the WKF is less important at this simulation scenario. The extensive study assesses the fluctuations on circuit performance and reliability, which can, in turn, be used to optimize nanoscale MOSFETs and circuits.

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Mixed-mode device simulation

Cited by 43 publications

References 48 publications

Equation‐oriented flowsheet simulation and optimization using pseudo‐transient models

Equation‐oriented flowsheet simulation and optimization using pseudo‐transient models

Dual Time-Stepping Using Second Derivatives

Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies

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