A method for measuring the fracture toughness of micrometer-sized single crystal silicon by tensile test

Li, K.; Kasai, Takashi; Nakao, Shigeki; Tanaka, Hiroshi; Ando, Tetsu; Shikida, Mitsuhiro; Sato, Kazuo

doi:10.1109/sensor.2003.1215349

Cited by 7 publications

(7 citation statements)

References 7 publications

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“…The tensile force applied to the specimen can be calculated from the load applied to the lever by subtracting the repulsive force of the torsion bar that is independently measured after the specimen is broken. The details of our on‐chip tensile testing method were previously presented 1,13 …”

Section: Methodsmentioning

confidence: 99%

“…The details of our on-chip tensile testing method were previously presented. 1,13 All experiments were carried out at room temperature. Tensile tests of the on-chip device were conducted on the measurement system in Fig.…”

Section: Test Proceduresmentioning

confidence: 99%

“…In this paper, we characterized the fracture toughness of single‐crystal silicon film in the micro‐sized domain. We developed the testing method for measuring the fracture toughness of silicon at the micrometre scale 13 . The tensile test of a thin‐film specimen with a single‐sided notch was carried out on a chip.…”

Section: Introductionmentioning

confidence: 99%

“…We developed the testing method for measuring the fracture toughness of silicon at the micrometre scale. 13 The tensile test of a thin-film specimen with a single-sided notch was carried out on a chip. The fracture stress values were compared between the notched and unnotched specimens.…”

Section: Introductionmentioning

confidence: 99%

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Fracture toughness measurement of thin‐film silicon

Ando

Nakao

et al. 2005

Fatigue Fract Eng Mat Struct

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A B S T R A C T The fracture toughness of single-crystal silicon thin films oriented to (100) and (110) was investigated by tensile testing under both 100 and 110 loading conditions. The specimen was fabricated from a p-type Czochralski (CZ)-grown wafer and passed through a thermal process during the fabrication of the test device. The measured fracture toughness is dependent on the loading direction in the tensile test and independent of the specimen surface orientation. The test results were 1.94 MPa √ m in the 100 direction and 1.17MPa √ m in the 110 . In these tests, no longitudinal size effect on the fracture stress or fracture toughness was observed. The SEM photographs obtained from the fracture specimens after the tensile test show that the crack initiated from the notch tip and propagated straight in the across-the-width direction on the (110) or (111) cleavage plane.

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Section: Methodsmentioning

confidence: 99%

Section: Test Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fracture toughness measurement of thin‐film silicon

Ando

Nakao

et al. 2005

Fatigue Fract Eng Mat Struct

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“…Using this method, we previously measured the fracture stress and fracture toughness of micro-scale single-crystal silicon film, and estimated the influence of loading direction and side-surface orientation at room temperature [6][7]. In the current study, we basically used on-chip tensile testing system for evaluating mechanical properties of single-crystal silicon at elevated temperature.…”

Section: On-chip Tensile Testmentioning

confidence: 99%

Tensile test of single crystal silicon film at elevated temperatures

Nakao

Ando

Shikida³

et al.

Micro-Nanomechatronics and Human Science, 2004 and the Fourth Symposium Micro-Nanomechatronics for Information-Based Society, 2

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A tensile-testing system that allows tests at elevated temperature was developed. Using this system, we evaluated the mechanical properties of micro-scale single-crystal silicon film at 573 K. The silicon test specimens had a surface orientation of (100), and a tensile direction of <110>. The average measured Young's modulus and fracture stress were 144 GPa and 5.19 GPa, respectively, at 573 K. At room temperature, Young's modulus and fracture stress were 137 GPa and 4.89 GPa. These similar values show that the mechanical properties of single-crystal silicon film hardly change at 573 K compared to room temperature.

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Anisotropy in fracture of single crystal silicon film characterized under uniaxial tensile condition

Kasai

Nakao

et al. 2005

Sensors and Actuators A: Physical

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A method for measuring the fracture toughness of micrometer-sized single crystal silicon by tensile test

Cited by 7 publications

References 7 publications

Fracture toughness measurement of thin‐film silicon

Fracture toughness measurement of thin‐film silicon

Tensile test of single crystal silicon film at elevated temperatures

Anisotropy in fracture of single crystal silicon film characterized under uniaxial tensile condition

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