A Method for Accurate Modeling of BAW Filters at High Power Levels

Tag, Andreas; Chauhan, Vikrant; Huck, Christian; Bader, B.; Karolewski, Dominik; Pitschi, F.M.; Weigel, Robert; Hagelauer, Amelie

doi:10.1109/tuffc.2016.2615109

Cited by 13 publications

(6 citation statements)

References 24 publications

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“…Comprehending the thermal conduction behavior of resonators and enhancing their power capacity is crucial for high-power filter applications [23][24][25][26]. Alterations in the ambient temperature within and surrounding the resonator may result in the filter failing to meet the desired performance.…”

Section: Enhancing Power Capacity With Supporting Pillarsmentioning

confidence: 99%

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

Zhang,

Jiang,

Tang

et al. 2024

Micromachines

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The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO3) exhibits a remarkably high electromechanical coupling coefficient and minimal intrinsic losses, making it an optimal material for fabricating bulk acoustic wave resonators. However, contemporary first-order antisymmetric (A1) Lamb mode resonators based on LiNbO3 thin films face specific challenges, such as inadequate mechanical stability, limited power capacity, and the presence of multiple spurious modes, which restrict their applicability in a broader context. In this paper, we present an innovative design for A1 Lamb mode resonators that incorporates a support-pillar structure. Integration of support pillars enables the dissipation of spurious wave energy to the substrate, effectively mitigating unwanted spurious modes. Additionally, this novel approach involves anchoring the piezoelectric thin film to a supportive framework, consequently enhancing mechanical stability while simultaneously improving the heat dissipation capabilities of the core.

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Section: Enhancing Power Capacity With Supporting Pillarsmentioning

confidence: 99%

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

Zhang,

Jiang,

Tang

et al. 2024

Micromachines

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“…The "G-S-G" signal ports on the left and right sides of the filter indicate the input and output of the RF signal. Combining the simulation results of the Mason model with those of the electromagnetic model enables the realization of acoustic-electromagnetic co-simulation [6,32,33].…”

Section: Design and Fabricationmentioning

confidence: 99%

Design and Fabrication of a Film Bulk Acoustic Wave Filter for 3.0 GHz–3.2 GHz S-Band

Gao,

Zheng,

et al. 2024

Sensors

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Film bulk acoustic-wave resonators (FBARs) are widely utilized in the field of radio frequency (RF) filters due to their excellent performance, such as high operation frequency and high quality. In this paper, we present the design, fabrication, and characterization of an FBAR filter for the 3.0 GHz–3.2 GHz S-band. Using a scandium-doped aluminum nitride (Sc0.2Al0.8N) film, the filter is designed through a combined acoustic–electromagnetic simulation method, and the FBAR and filter are fabricated using an eight-step lithographic process. The measured FBAR presents an effective electromechanical coupling coefficient (keff2) value up to 13.3%, and the measured filter demonstrates a −3 dB bandwidth of 115 MHz (from 3.013 GHz to 3.128 GHz), a low insertion loss of −2.4 dB, and good out-of-band rejection of −30 dB. The measured 1 dB compression point of the fabricated filter is 30.5 dBm, and the first series resonator burns out first as the input power increases. This work paves the way for research on high-power RF filters in mobile communication.

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“…For linear analysis of BAW devices, Mason's equivalent circuit model is one of the most popular techniques [67], [68]. By extending this model to nonlinear form, generation of nonlinear signals in a BAW device is represented as Fig.…”

Section: B Modeling Approach For Baw Devicesmentioning

confidence: 99%

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

et al. 2023

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This paper reviews the latest developments in microwave acoustic wave devices. After an introduction and brief history of bulk acoustic wave (BAW) and surface acoustic wave (SAW) devices, a review is given for guided SAWs and XBARs -two new technologies, which are promising for future 5G applications. Following this, we discuss recent simulation techniques, such as 3D finite element method (3D FEM) and simulation of nonlinearities, as well as filter synthesis. Next, a review on tunable and reconfigurable acoustics is given. Finally, we present the latest developments in microwave acoustics for millimeter-wave (mm-wave) operation as well as BAW oscillators.INDEX TERMS Bulk acoustic wave (BAW) devices, filter, filter-synthesis, front-end, high power, MTT 70th Anniversary Special Issue, multiplexer, nonlinearity, resonator, surface acoustic wave (SAW) devices.

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A Method for Accurate Modeling of BAW Filters at High Power Levels

Cited by 13 publications

References 24 publications

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

Design and Fabrication of a Film Bulk Acoustic Wave Filter for 3.0 GHz–3.2 GHz S-Band

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

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