A method for accurate localisation of EBSD pattern centres

Maurice, Claire; Dzięcioł, Krzysztof; Fortunier, Roland

doi:10.1016/j.ultramic.2010.10.007

Cited by 66 publications

(52 citation statements)

References 14 publications

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“…The camera movement method has been tried in many laboratories over the years but has not received much comment in the literature [26,[30][31][32]. As the projection of the pattern is centred about the pattern centre, it is possible to establish the location of the pattern centre by simply determining what point in the EBSPs remains stationary during insertion or withdrawal of the camera.…”

Section: Discussionmentioning

confidence: 99%

Factors affecting the accuracy of high resolution electron backscatter diffraction when using simulated patterns

et al. 2010

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Section: Discussionmentioning

confidence: 99%

Factors affecting the accuracy of high resolution electron backscatter diffraction when using simulated patterns

et al. 2010

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“…The exact position of the electron emission point on the sample, relative to the phosphor screen, is termed the pattern center (PC), or the projection center. Accurate determination of this position is difficult, although there have been some recent and re-emerging advances that seem promising [10,[25][26][27]. Previous work indicates that an error in PC determination of 20 μm (~0.05% of the phosphor screen for a typical system) can produce an error in…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Validation of kinematically simulated pattern HR-EBSD for measuring absolute strains and lattice tetragonality

Fullwood

Vaudin

Daniels

et al. 2015

Materials Characterization

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Cross correlation techniques applied to EBSD patterns have led to what has beentermed "high-resolution EBSD" (HR-EBSD). The technique yields higher accuracy orientation and strain data which is obtained by comparing a given EBSD pattern with either a real or a simulated reference pattern. Real reference patterns are often taken from a "central" position in a given grain, where it is hoped that the material is "strainfree", and they enable the determination of relative changes in orientation and strain from that present in the lattice at the reference position. Simulated patterns, on the other hand, enable comparison of the sample lattice with that of a perfect lattice, resulting in a measure of absolute strain and orientation. However, the simulated pattern method has several drawbacks, including the need to accurately specify microscope geometry, the lower fidelity / detail of simulated patterns compared with * Corresponding author: dfullwood@byu.edu A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT2 real patterns, and the potential for microscope-specific bias in the measured patterns (such as due to optical distortion).These drawbacks have led to much debate about the utility of the crosscorrelation technique using simulated patterns. This paper is the first to assess the accuracy of the simulated pattern method relative to the real pattern approach in a setting where accuracy can be reasonably determined, thus providing a fair assessment of the potential of the simulated pattern technique Based upon recent developments towards a standard material for assessing strain mapping techniques, this paper assesses the overall accuracy of the simulated pattern technique. Mismatch strains are calculated using both the real and simulated pattern techniques for a SiGe film deposited on a Si substrate. While the simulated pattern technique is not as accurate or precise as the real pattern technique for providing relative strains, it provides an estimate of absolute strain that is not available via the real pattern approach.

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“…Same recent works [32,33,34,39] propose to use local features. In [32] a new local method for detecting planar rotational symmetry using SIFT as key points is presented.…”

Section: Related Workmentioning

confidence: 99%

Symmetrical motif extraction for periodic ornamental patterns

Nasri

Benslimane

2014

2014 International Conference on Multimedia Computing and Systems (ICMCS)

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This paper presents an automatic method to extract symmetrical motif for periodic ornamental patterns. It is well known that for every periodic pattern a lattice of points is associated. The points of this lattice are inter-related by two translational vectors, which define the translational unit representing the repetitive motif. This repetitive motif must be Symmetric if we are interested to identify the symmetry group to which a particular pattern belongs. To do so, we propose a new method based on autocorrelation function ACF and SIFT algorithm. Tests on 166 images characterized with different visual quality demonstrate the capability of the proposed method for automatic periodic motif extraction without the need of human intervention.

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A method for accurate localisation of EBSD pattern centres

Cited by 66 publications

References 14 publications

Factors affecting the accuracy of high resolution electron backscatter diffraction when using simulated patterns

Factors affecting the accuracy of high resolution electron backscatter diffraction when using simulated patterns

Validation of kinematically simulated pattern HR-EBSD for measuring absolute strains and lattice tetragonality

Symmetrical motif extraction for periodic ornamental patterns

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