A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination–deflection effect

Leepattarapongpan, Chana; Phetchakul, Toempong; Penpondee, Naritchaphan; Pengpad, Puttapon; Srihapat, Arckom; Jeamsaksiri, Wutthinan; Chaowicharat, Ekalak; Hruanun, Charndet; Poyai, Amporn

doi:10.1016/j.mejo.2014.03.016

Cited by 5 publications

(2 citation statements)

References 21 publications

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“…However, they are still inferior to other magnetic sensors in the aspects of bulky volume of coils, higher power consumption and lower integration capability. Other competitive magnetometers such as anisotropic-magnetoresistance (AMR), tunneling magnetoresistance (TMR), giant-magnetoresistance (GMR), magnetoimpedence (MI) and magnetotransitor (MT) devices have been extensively studied and reported [ 1 , 2 , 3 , 4 ]. Nonetheless, with the progress of system miniaturization, the recent advance of miniature fluxgate sensors using CMOS-MEMS technologies has been promising.…”

Section: Introductionmentioning

confidence: 99%

A 3-Axis Miniature Magnetic Sensor Based on a Planar Fluxgate Magnetometer with an Orthogonal Fluxguide

Huang

2015

Sensors

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A new class of tri-axial miniature magnetometer consisting of a planar fluxgate structure with an orthogonal ferromagnetic fluxguide centrally situated over the magnetic cores is presented. The magnetic sensor possesses a cruciform ferromagnetic core placed diagonally upon the square excitation coil under which two pairs of pick-up coils for in-plane field detection are allocated. Effective principles and analysis of the magnetometer for 3-D field vectors are described and verified by numerically electromagnetic simulation for the excitation and magnetization of the ferromagnetic cores. The sensor is operated by applying the second-harmonic detection technique that can verify V-B relationship and device responsivity. Experimental characterization of the miniature fluxgate device demonstrates satisfactory spatial magnetic field detection results in terms of responsivity and noise spectrum. As a result, at an excitation frequency of 50 kHz, a maximum in-plane responsivity of 122.4 V/T appears and a maximum out-of-plane responsivity of 11.6 V/T is obtained as well. The minimum field noise spectra are found to be 0.11 nT/√Hz and 6.29 nT/√Hz, respectively, in X- and Z-axis at 1 Hz under the same excitation frequency. Compared with the previous tri-axis fluxgate devices, this planar magnetic sensor with an orthogonal fluxguide provides beneficial enhancement in both sensory functionality and manufacturing simplicity. More importantly, this novel device concept is considered highly suitable for the extension to a silicon sensor made by the current CMOS-MEMS technologies, thus emphasizing its emerging applications of field detection in portable industrial electronics.

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Section: Introductionmentioning

confidence: 99%

A 3-Axis Miniature Magnetic Sensor Based on a Planar Fluxgate Magnetometer with an Orthogonal Fluxguide

Huang

2015

Sensors

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“…The fluxgate MMS required a post-CMOS process; thus, the fabrication of the fluxgate was more complicated than that of Li [16], Oh [17], Lin [18], Osberger [19], and Tseng [20]. A three-axis MMS, developed by Leepattarapongpan [22], was made using a CMOS process. The MMS was a magnetotransistor, its structure including four collectors, four bases, and one emitter.…”

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confidence: 99%

Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Chen

Tsai

Shih

et al. 2020

Sensors

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The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

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Research of the Monolithic Integrated 3-D Magnetic Field Sensor Based on MEMS Technology

et al. 2017

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A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination–deflection effect

Cited by 5 publications

References 21 publications

A 3-Axis Miniature Magnetic Sensor Based on a Planar Fluxgate Magnetometer with an Orthogonal Fluxguide

A 3-Axis Miniature Magnetic Sensor Based on a Planar Fluxgate Magnetometer with an Orthogonal Fluxguide

Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Research of the Monolithic Integrated 3-D Magnetic Field Sensor Based on MEMS Technology

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