A Meeting of Materials: Integrating Diverse Semiconductor Technologies for Improved Performance at Lower Cost

From integrated circuits to integrated systems

“…例如通用异质 集成和知识产权重用战略 (common heterogenous integration and IP reuse strategies, CHIPS)、多样化 可用异质集成 (diverse accessible heterogeneous integration, DAHI)、 三维单芯片系统 (three dimensional monolithic system-on-a-chip, 3DSoC)、 可缩放毫米波架构可重构收发机 (scalable millimeter-wave architectures for reconfigurable transceivers, SMART) 等, 旨在从高效设计、多元工艺和重构架构等方 面引领电子技术革命. 在 DAHI 和更早的硅基化合物半导体材料 (compound semiconductor materials on silicon, COSMOS) 项目支持下, 已经形成了异质生长、薄膜转移、小芯片组装和晶圆键合 4 类异质 异构集成技术路线 [33] , 如图 9 所示. DRAPA 试图通过异质集成等先进技术使电子系统探测能力和速 度提高 100 倍, 体积、重量和功耗下降为 1/100.…”

Implementation Challenges and Opportunities in Beyond-5G and 6G Communication

“…For example, GaN devices can deliver a power density of 3.6 W/mm at 86 GHz in continuous wave operation and a P max of 3.6 Watt at 83 GHz was reported in pulse mode [44]. For an efficient implementation, there is also an ongoing effort to co-integrate GaN or III-V devices with CMOS or BiCMOS [45]. This co-integration can be enabled either by using monolithic integration where the III-V devices are placed next to CMOS in the same substrate or by employing heterogeneous integration to develop modules also incorporating microwave elements as well as Antennas-in-Package (AiP).…”

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

“…For high-frequency applications in space and defense and the 5G application in the commercial world, heterogeneous integration for RF has become an essential task. Typically, hetero-integration of RF devices is done with different semiconductor materials not only CMOS to address the required specific performance like Diverse Accessible Heterogeneous Integration (DAHI) technology [193]. HI methods can be wafer to wafer (WTW), chip to wafer (CTW), or Chip to Chip (CTC), etc [194].…”