A maskless post-CMOS bulk micromachining process and its application

Dai, Ching‐Liang; Chiou, J. Albert; Lu, Michael S.-C.

doi:10.1088/0960-1317/15/12/019

Cited by 32 publications

(20 citation statements)

References 23 publications

(24 reference statements)

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“…A CMOS process employed to make various MEMS devices is called a CMOS-MEMS technique [20][21][22]. Many microsensors have been made this way [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process

et al. 2017

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Featured Application: Three-axis magnetic field microsensors in this study can be applied to various electronic instruments, portable electronic devices, mobile phones, and industrial equipment.Abstract: This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shallow trench isolation) oxide in the process was used to limit the current direction and reduce leakage current. The microsensor produces a voltage difference once it senses a magnetic field. An amplifier circuitry magnifies voltage difference into a voltage output. Experiments reveals that the MF microsensor has a sensitivity of 1.45 V/T along the x-axis and a sensitivity of 1.37 V/T along the y-axis.

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“…A CMOS process employed to make various MEMS devices is called a CMOS-MEMS technique [20][21][22]. Many microsensors have been made this way [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process

et al. 2017

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“…The use of commercial CMOS process to fabricate MEMS devices is called CMOS-MEMS technology [11][12][13][14]. Micro sensors and actuators manufactured by this technology usually require a post-CMOS process to add functional materials [15][16][17] or to release suspended structures [18][19][20]. In this work, we develop a micromachined RF switch using the CMOS-MEMS technology.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

2015

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Abstract:The study investigates the design and fabrication of a micromachined radio frequency (RF) capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS) technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW) lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM) software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

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“…The fabrication energy harvester in this work is easier than that of Su et al [13], Huesgen et al [14], Yuan et al [16] and Kouma et al [17]. The output power of the energy harvester in this work exceeds that of Kao et al [18] MEMS devices made by the commercial CMOS process are called CMOS-MEMS technology [19][20][21]. Many microsensors and microactuators have been manufactured using this technology [22,23].…”

Section: Introductionmentioning

confidence: 91%

Manufacturing and Characterization of a Thermoelectric Energy Harvester Using the CMOS-MEMS Technology

2015

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Abstract:The fabrication and characterization of a thermoelectric energy harvester using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technology were presented. The thermoelectric energy harvester is composed of eight circular energy harvesting cells, and each cell consists of 25 thermocouples in series. The thermocouples are made of p-type and n-type polysilicons. The output power of the energy harvester relies on the number of the thermocouples. In order to enhance the output power, the energy harvester increases the thermocouple number per area. The energy harvester requires a post-CMOS process to etch the sacrificial silicon dioxide layer and the silicon substrate to release the suspended structures of hot part. The experimental results show that the energy harvester has an output voltage per area of 0.178 mV¨mm´2¨K´1 and a power factor of 1.47ˆ10´3 pW¨mm´2¨K´2.

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A maskless post-CMOS bulk micromachining process and its application

Cited by 32 publications

References 23 publications

A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process

A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Manufacturing and Characterization of a Thermoelectric Energy Harvester Using the CMOS-MEMS Technology

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