A many-band silicon model for hot-electron transport at high energies

Brunetti, Rossella; Jacoboni, Carlo; Venturi, F.; Sangiorgi, E.; Riccò, B.

doi:10.1016/0038-1101(89)90291-8

Cited by 93 publications

(19 citation statements)

References 6 publications

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“…From this, we can conclude that the analytical model, which is based on the accurate fitting of the real band structure, is reasonable in the Monte Carlo simulation of the transport process in ZnS. This conclusion coincides with the previous attempts in Si and GaAs [16][17][18]. The curve gained in the nonparabolic model does not coincide with others in each figure, which shows the inaccuracy of the nonparabolic model.…”

Section: Scattering Ratessupporting

confidence: 86%

“…In this method, the computation spends will approximate to that of the nonparabolic model since it remains analytic and the accuracy should approximate to that of the full band model since it describes the band structure correctly. In fact, this method has been attempted in Si [16,17] and GaAs [18], and is named as a "analytical band structure model". The results are reasonable.…”

Section: Introductionmentioning

confidence: 99%

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Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices

Zhao

Wang

2000

Acta Phys. Pol. A

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In this paper, an analytical band model is introduced in Monte Carlo simulation of electric transport process in thin film electroluminescent devices. The band structure of ZnS calculated from the empirical pseudopotential method is fitted by using polynomials. The density of states and scattering rates are also calculated from these polynomials. Based on these results, the electric transport process in ZnS-type thin film electroluminescent devices is simulated through the Monte Carlo method. By comparison with others, this model is as fast as the nonparabolic model and as accurate as the full band model. Furthermore, the influence of the band model on the simulation results is also investigated. We show that the dispersion relation and density of states are all important in the simulation.

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Section: Scattering Ratessupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices

Zhao

Wang

2000

Acta Phys. Pol. A

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“…The first maximum near 1.7 eV and the second The second maximum in the DOS function at energy of 2.9 eV also becomes apparent at high electric fields. maximum near 2.9 eV are known characteristics of the DOS function [15], [16].…”

Section: Monte Carlo Simulationsmentioning

confidence: 99%

Spectral Characteristics of Hot Electron Electroluminescence in Silicon Avalanching Junctions

Plessis

Venter

Bellotti

2013

IEEE J. Quantum Electron.

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“…We present some preliminary results based on the Kane band model and Brunetti et al band model [14]. The Kane dispersion relation is given by,…”

Section: Numerical Resultsmentioning

confidence: 99%

A Discontinuous Galerkin Solver for Full-Band Boltzmann-Poisson Models

Cheng

Gamba

Majorana

et al. 2009

2009 13th International Workshop on Computational Electronics

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We present new preliminary results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. Very recently in [1], [2], [3], results for one and two dimensional devices were obtained in the case of silicon semiconductor assuming the non-parabolic band approximation. Here, more general band structures are considered. Preliminary benchmark numerical tests on Kane and Brunetti et al. band models are reported.

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A many-band silicon model for hot-electron transport at high energies

Cited by 93 publications

References 6 publications

Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices

Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices

Spectral Characteristics of Hot Electron Electroluminescence in Silicon Avalanching Junctions

A Discontinuous Galerkin Solver for Full-Band Boltzmann-Poisson Models

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