A Manufacturable, Non-Plated, Non-Ag Metallization Based 20.44% Efficient, 243cm2 Area, Back Contacted Solar Cell on 40um Thick Mono-Crystalline Silicon

Wingert, Matthew C.; Du, Tao; Stalcup, T.; Dutton, David T.; Tamilmani, Subramanian; Grupp, D. E.; Su, Yu-Feng; Kommera, Swaroop; Calcaterra, Andrew; Coutant, S.; Deshazer, Heather; Seutter, S.M.; Kramer, John W.; Rana, V.; Deshpande, A.; Moslehi, Mehrdad M.; Kapur, Pawan

doi:10.4229/28theupvsec2013-3do.7.6

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A Manufacturable, Non-Plated, Non-Ag Metallization Based 20.44% Efficient, 243cm2 Area, Back Contacted Solar Cell on 40um Thick Mono-Crystalline Silicon

Cited by 5 publications

References 0 publications

Realization of Conductive Wells for Rear Side Electrical Contact of Integrated Solar Cell

Realization of Conductive Wells for Rear Side Electrical Contact of Integrated Solar Cell

Plasma–silicone interaction during a-Si:H deposition on solar cell wafers bonded to glass

Influence of substrate potential on a-Si:H passivation of Si foils bonded to glass

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