2019
DOI: 10.1109/jestpe.2019.2894783
|View full text |Cite
|
Sign up to set email alerts
|

A Lumped-Charge Model for High-Power PT-p-i-n Diode With a Buffer Layer

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 8 publications
(2 citation statements)
references
References 25 publications
0
2
0
Order By: Relevance
“…However, the literature results and our simulation show that for a PIN diode switching between a forward-biased state and a reverse-biased state, the use of a density-dependent lifetime covers both the low-and high-injection regions, and gives a more accurate current. [17] The width of the undepleted N − base is given by the following equation in the FVC method:…”
Section: Spice Circuit Implementation Of the Fvc Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…However, the literature results and our simulation show that for a PIN diode switching between a forward-biased state and a reverse-biased state, the use of a density-dependent lifetime covers both the low-and high-injection regions, and gives a more accurate current. [17] The width of the undepleted N − base is given by the following equation in the FVC method:…”
Section: Spice Circuit Implementation Of the Fvc Methodsmentioning
confidence: 99%
“…[11,12] It can use a density-dependent carrier lifetime, which is more accurate at a low injection level. [17] A further investigation of characteristics of the LC method is very useful. In the following we will analyze the main points and limitations of this method.…”
Section: Introductionmentioning
confidence: 99%