A finite volume charge method has been proposed to simulate PIN diodes and IGBT devices using SPICE simulators by extending the lumped-charge method. The new method assumes the local quasi-neutrality in the un-depleted N- base region and uses the total collector current, the nodal hole density and voltage as the basic quantities. In SPICE implementation, it makes the clear and accurate definitions of three kinds of nodes: the carrier density nodes, the voltage nodes, and the current generator nodes in the un-depleted N- base region. It uses the central finite difference to approximate electron and hole current generators, and sets up the current continuity equation in a control volume for every carrier density node in the un-depleted N- base region. It is easy to increase the number of nodes to describe the fast spatially varying carrier density in transient processes. We use this method to simulate IGBT devices in SPICE simulators and get a good agreement with TCAD simulations.