A low voltage operational single-walled carbon nanotube thin-film transistor containing a high capacitance gate dielectric layer produced by layer-by-layer deposition

Shin, Kwonwoo; Jeon, Hayoung; Park, Jin Young; Kim, Yoonjin; Cho, Hosouk; Lee, Gunjoo; Han, Jong Hun

doi:10.1016/j.orgel.2010.05.012

Cited by 4 publications

(1 citation statement)

References 16 publications

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“…These unique ranges of properties [3] result from the reduced dimensionality, inherent to nanosystems with carbon atoms. Carbon nanostructures (fullerenes, carbon nanotubes, carbon nanofibers…), discovered during last decades, have been subject of intensive research for a wide range of applications [4][5][6][7][8] These new forms of carbon are emerging as the main target of many researchers around the world in pursuing the next nanoscale devices [9][10][11][12][13][14]. Proprieties of nanomaterials in general and Carbon Nanostructures (CNSs) in particular can range in two groups.…”

Section: Introductionmentioning

confidence: 99%

Curvature, Hybridization and Contamination of Carbon Nanostructures Analysis Using Electron Microscopy and XANES Spectroscopy

Medjo¹,

Sendja²,

Mane³

2014

MSA

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The ability to control the nanoscale shape of carbon nanostructures during wide-scale synthesis process is an essential goal in research for Nanotechnology applications. This paper reports a significant progress toward that goal. Variant CVD has been used for the synthesis of the samples studied. Curvature, hybridization and contamination are analyzed using Electron Microscopies and XANES spectroscopy. The investigations of the results show that four types of samples are obtained. They are carbon nanotubes (CNTs), carbon nanofibers (CNFs), carbon nanowalls (CNWs) and carbon nanoparticles (CNPs). Almost all of them have catalyst nanoparticles (metal) on top in top growth model or on base in base growth model and encapsulated or adsorbed in sidewalls. The orientation of tubular carbon nanomaterials depends on operating parameters. They are classified in three groups: the poorly oriented, the medium oriented and the highly oriented. Their contamination (radicals, atoms and molecules) and hybridization are intrinsically related to the curvature of their graphene layers. XANES spectroscopy allows quantitative characterization of nanomaterials.

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Section: Introductionmentioning

confidence: 99%

Curvature, Hybridization and Contamination of Carbon Nanostructures Analysis Using Electron Microscopy and XANES Spectroscopy

Medjo¹,

Sendja²,

Mane³

2014

MSA

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Electronic transport properties of capped-carbon-nanotube-based molecular junctions with multiple N and B dopants

Zhao

Liu

2012

Chin. Sci. Bull.

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By applying non-equilibrium Green's function in combination with density functional theory, we investigated the electronic transport properties of capped-carbon-nanotube-based molecular junctions with multiple N and B dopants. The results show that the electronic transport properties are strongly dependent on the numbers and positions of N and B dopants. Best rectifying behavior is observed in the case with one N and one B dopants, and it is deteriorated strongly with the increasing dopants. The rectifying direction is even reversed with the change of doping positions. Moreover, obvious negative differential resistance behavior at very low bias is observed in some doping cases.carbon nanotube, rectifying, negative differential resistance, non-equilibrium Green function, density functional theory Citation:Zhao P, Liu D S. Electronic transport properties of capped-carbon-nanotube-based molecular junctions with multiple N and B dopants.

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Carbon Nanotube Thin Film Transistors for Flat Panel Display Application

et al. 2016

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Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

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A low voltage operational single-walled carbon nanotube thin-film transistor containing a high capacitance gate dielectric layer produced by layer-by-layer deposition

Cited by 4 publications

References 16 publications

Curvature, Hybridization and Contamination of Carbon Nanostructures Analysis Using Electron Microscopy and XANES Spectroscopy

Curvature, Hybridization and Contamination of Carbon Nanostructures Analysis Using Electron Microscopy and XANES Spectroscopy

Electronic transport properties of capped-carbon-nanotube-based molecular junctions with multiple N and B dopants

Carbon Nanotube Thin Film Transistors for Flat Panel Display Application

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