Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.
Metal-tube contact is known to play an important role in carbon nanotube field-effect transistors (CNT-FETs) which are fabricated on individual CNTs. Less attention has been paid to the contact effect in network type carbon nanotube thin film transistors (CNT-TFTs). In this study, we demonstrate that contact plays an even more important role in CNT-TFTs than in CNT-FETs. Although the Schottky barrier height at the metal-tube contact can be tuned by the work function of the metal, similar to the case in CNT-FETs, the contact resistance (Rc) forms a much higher proportion of the total resistance in CNT-TFTs. Interestingly, the contact resistivity was found to increase with channel length, which is a consequence of the percolating nature of the transport in CNT films, and this behavior does not exist in CNT-FETs and normal 2D Ohmic conductors. Electrical transport in CNT-TFTs has been predicted to scale with channel length by stick percolation theory. However, the scaling behavior is also impacted, or even covered up by the effect of Rc. Once the contact effect is excluded, the covered scaling behavior can be revealed correctly. A possible way of reducing Rc in CNT-TFTs was proposed. We believe the findings in this paper will strengthen our understanding of CNT-TFTs, and even accelerate the commercialization of CNT-TFT technology.
Carbon nanotube thin film transistors (CNT-TFTs) are regarded as promising technology for active matrix pixel driving circuits of future flat panel displays (FPD). For FPD application, unipolar thin film transistors (TFTs) with high mobility (μ), high on-state current (I), low off-current (I) at high source/drain bias and small hysteresis are required simultaneously. Though excellent values of those performance metrics have been realized individually in different reports, the overall performance of previously reported CNT-TFTs has not met the above requirements. In this paper, we found that yttrium oxide (YO) capping is helpful in improving both I and μ of CNT-TFTs. Combining YO capping and AlO passivation, unipolar CNT-TFTs with high I/I (>10) and low I (∼pA) at -10.1 V source/drain bias, and relatively small hysteresis in the range of -30 V to +30 V gate voltage were achieved, which are capable of active matrix display driving.
Carbon nanotube thin film transistors (CNT-TFTs) are promising candidates for future high performance and low cost macro-electronics. However, most of the reported CNT-TFTs are fabricated in small quantities on a relatively small size substrate. The yield of large scale fabrication and the performance uniformity of devices on large size substrates should be improved before the CNT-TFTs reach real products. In this paper, 25 200 devices, with various geometries (channel width and channel length), were fabricated on 4-in. size ridged and flexible substrates. Almost 100% device yield were obtained on a rigid substrate with high out-put current (>8 μA/μm), high on/off current ratio (>105), and high mobility (>30 cm2/V·s). More importantly, uniform performance in 4-in. area was achieved, and the fabrication process can be scaled up. The results give us more confidence for the real application of the CNT-TFT technology in the near future.
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