A low-voltage and low-power RF MEMS series and shunt switches actuated by combination of electromagnetic and electrostatic forces

Cho, Il‐Joo; Song, Taeksang; Baek, Sang-Min; Yoon, Euisik

doi:10.1109/tmtt.2005.850406

Cited by 97 publications

(27 citation statements)

References 15 publications

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“…According to the simulation as shown in figure 6, the insertion loss can be greatly reduced down to −0.75 dB at 12 GHz once the resistivity of the Si substrate increases up to 100 cm. Since the contact loss in the switch is around −0.38 dB without counting the CPW loss, which is comparable to the latest published Au contact switch whose loss is about −0.37 dB [14], it indicates that the as-fabricated switch performance can be further improved using the flexible organic substrate instead of the silicon substrate and a shorter transmission line to effectively reduce substrate, metal resistive losses. Nevertheless, the SU-8 process indeed provides an alternative approach for the fabrication of MEMS switches with a decent RF performance.…”

Section: Resultssupporting

confidence: 62%

SU-8 serial MEMS switch for flexible RF applications

Chao

Hsu

Lin

et al. 2011

J. Micromech. Microeng.

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This paper presents a novel SU-8 micromachining process for MEMS series switch fabrication. The switch is designed with a clamped-clamped SU-8 (5 μm)/Cu (2 μm)/SU-8 (3 μm) beam structure driven by electrostatic force, which is fabricated on a silicon substrate with a resistivity of ∼5 cm. Experimental results show that the switch can exhibit better than −4.48 dB insertion loss and −28.2 dB isolation up to 12 GHz. Such a large insertion loss is mainly caused by substrate loss which can be further reduced down to −0.75 dB as long as the substrate resistivity is increased up to 100 cm.

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Section: Resultssupporting

confidence: 62%

SU-8 serial MEMS switch for flexible RF applications

Chao

Hsu

Lin

et al. 2011

J. Micromech. Microeng.

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“…When the MEMS movable part collapses onto the underlying electrodes (i.e. pulls-in) the device state changes (Cho et al ., 2005). • Piezoelectric .…”

Section: Electromagnetic Properties and Mechanical Actuation Of Rf Mementioning

confidence: 99%

RF MEMS passive components for wireless applications

Iannacci

2013

Handbook of Mems for Wireless and Mobile Applications

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“…Equations (8) and (9) can be written in the Lagrangian form using equation (19) in a straightforward manner and are applied as boundary conditions on the undeformed configuration of the boundaries γ m and γ s . Once A is computed from the magnetostatic analysis, the magnetic field B can be computed using the relation B = F −T ∇ X × A (derived from equation (6)). In the case of 2D analysis performed in the X-Y domain, the magnetic field B consists of the terms B X and B Y (as B Z = 0) which can be computed as…”

Section: Lagrangian Formulationmentioning

confidence: 99%

A hybrid full-Lagrangian technique for the static and dynamic analysis of magnetostatic MEMS

De¹,

Aluru²

2006

J. Micromech. Microeng.

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Magnetostatic microelectromechanical systems (MEMS) are based on the electromagnetic interactions between magnetic microstructures and active (coils) or passive (permanent magnets) magnetic field sources. They offer distinct advantages at the micrometer scale in strength, polarity and distance of actuation, when compared to other methods of actuation in MEMS. For proper understanding and detailed exploration of magnetostatic MEMS, it is important to have a reliable and efficient physical level simulation tool. In this paper, we propose an efficient technique, namely the hybrid full-Lagrangian technique for the static and dynamic analysis of magnetostatic MEMS. In this technique, the magnetostatic analysis needed to compute the magnetostatic force acting on the microstructure is performed using a hybrid BIE/Poisson approach. The Poisson equation is solved for the interior magnetostatic domains and the boundary integral equation (BIE) formulation of the potential equation is solved for the exterior magnetostatic domain and the different domains are coupled through interface conditions. A Lagrangian description of all the physical domains (magnetostatic, mechanical and fluidic) is used to eliminate geometry updates and rediscretization. The Lagrangian formulation along with the hybrid approach makes the proposed technique much more efficient than conventional tools for the analysis of magnetostatic MEMS. The new technique is used to simulate several magnetostatic MEMS switches and relays and validated by comparing numerical simulation results with experimental data. Dynamic analysis of a magnetostatic MEMS switch is performed using the new technique.

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A low-voltage and low-power RF MEMS series and shunt switches actuated by combination of electromagnetic and electrostatic forces

Cited by 97 publications

References 15 publications

SU-8 serial MEMS switch for flexible RF applications

SU-8 serial MEMS switch for flexible RF applications

RF MEMS passive components for wireless applications

A hybrid full-Lagrangian technique for the static and dynamic analysis of magnetostatic MEMS

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