A Low-Voltage 77-GHz Automotive Radar Chipset

A 91 to 110-GHz tapered constructive wave power amplifier in a 0.12µm SiGe BiCMOS process

“…Fig. 3 plots the 1-dB compression point of the feedback amplifier and a single stage of the proposed TCWPA against feedback resistance based on the analysis in (3). While the linearity of the proposed traveling wave amplifier can be much higher than the linearity of the active feedback circuit, the improvement in the linearity comes at the expense of the gain.…”

“…Recent work in SiGe has demonstrated the capability of high-speed HBT devices to generate significant millimeter wave power for automotive radar and communications applications [1], [2], [3], [4]. W-band applications for imaging and point-to-point communication could offer new platforms for SiGe transceivers where the fully integrated solutions offer advantages over III-V technologies [4].…”

SiGe HBTs featuring fT ≫400GHz at room temperature

“…Recent works have even reported halfterahertz cut-off frequencies at cryogenic temperatures [3], [4]. Thus, SiGe HBTs are now able to address millimeter-wave applications up to 100GHz [5]. Moreover, the interest in emerging terahertz (THz) applications is growing in the electronic community.…”

A wideband high-efficiency 79–97 GHz SiGe linear power amplifier with ≫ 90 mW output

“…Recent works in silicon germanium technology have demonstrated the capability of generating significant millimeter-wave power within W-band (75 to 110 GHz) with reasonable efficiencies [1]- [4]. Fully-integrated SiGe power amplifiers (PAs) are particularly attractive for phased-array and point-to-point communication systems where a full silicon system-on-chip solution can replace complex GaAs-based T/R modules [5].…”