A low-threshold room-temperature injection laser

Hayashi, I.; Panish, M. B.; Foy, P. W.

doi:10.1109/jqe.1969.1075759

Cited by 144 publications

(25 citation statements)

References 10 publications

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“…A similar suggestion was made by Alferov and Kazarinov (see Alferov, 2000 , ref, 4;Alferov et al , 1969 ) and the Nobel Prize in Physics was awarded half jointly to Alferov and Kroemer. Single heterostructure lasers were made by Hayashi, Panish and Foy ( 1969 ) (see Hayashi and Panish, 1970 ) and by Kressel and Nelson ( 1969 ), and a double heterostructure laser, the model upon which the majority of present-day laser diodes are based, was reported by Alferov et al ( 1970 ).…”

Section: Historical Backgroundmentioning

confidence: 99%

Principles of semiconductor lasers

Blood

2013

Semiconductor Lasers

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Section: Historical Backgroundmentioning

confidence: 99%

Principles of semiconductor lasers

Blood

2013

Semiconductor Lasers

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“…Its importance as an electronic material was established in 1969-1970 with the development of the heterostructure laser (4)(5)(6), and later, the GaAs-(Ga,A1)As solar cell (7). For these applications, the (Ga,A1)As is required to be heavily doped, so that the background purity is not critical.…”

Section: ~mentioning

confidence: 99%

The Liquid Phase Epitaxial Growth of High Purity Ga1 − x Al x As

Chandra

Eastman

1980

J. Electrochem. Soc.

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We report the obtainment of high purity in the LPE growth of n Ga1−xAlxnormalAs false(0≤x≤0.3false) at 700°–675°C. Carrier concentrations at or below 1×1015 cm−3 have been consistently obtained, the lowest value achieved being under 3×1014 cm−3 at x=0.15 . It has been shown that these low carrier concentrations do not result from a high compensation ratio. In fact, false(ND+NAfalse) has been measured to lie in the range 1–2×1015 for all but one of the ten samples examined. The Hall mobilities of these samples drop gradually from ≈100,000 cm2 Vsec for x=0 normalto 24,000 for x=0.18 at 77°K, and from 8600 for x=0 normalto 5100 for x=0.18 at 295°K. We believe that a dominant shallow donor impurity (thought to be sulfur) is introduced into the melt with the aluminum. We find that the second epigrowth from a melt is significantly purer than the first, presumably due to the extra baking.

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“…Optical amplification in a semiconductor laser is similar to that in FP [6]. To reduce threshold current density in room temperature and modify semiconductor lasers' characteristics, single hetero (SH) structure was introduced in 1962 [7][8][9], and in late 1960s double-hetero (DH) structure was introduced to reduce threshold current down to 1 kA/cm 2 [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Analysis and modeling of ridge waveguide quarterly wavelength shifted distributed feedback laser with three rate equations

Ghadimi

Shal

2015

Front. Optoelectron.

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In this paper, ridge waveguide quarterly wavelength shifted distributed feedback (RW-QWS-DFB) laser was modeled and analyzed. In this behavioral model, some characteristics of the device, such as threshold current, line width, power of output wave, spectrum of output wave, and laser stability in high powers, were investigated in accordance with different physical and geographical parameters such as sizes and structures of the layers. Considering a new proposed algorithm, the analysis of the mentioned structures was performed using transfer matrix method (TMM), the solution of coupled waves and carrier rate equations. The results showed the advantages of some parameters in this structure.

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A low-threshold room-temperature injection laser

Cited by 144 publications

References 10 publications

Principles of semiconductor lasers

Principles of semiconductor lasers

The Liquid Phase Epitaxial Growth of High Purity Ga1 − x Al x As

Analysis and modeling of ridge waveguide quarterly wavelength shifted distributed feedback laser with three rate equations

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