A low-temperature X-ray diffraction study of the Cu2ZnSnSe4 thin films

Станчик, А. В.; Чумак, В. А.; Гременок, В. Ф.; Baraishuk, S. M.

doi:10.1016/j.mencom.2021.09.045

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…This may indicate that MoS 2 prevents the formation of MoSe 2 . A similar obstacle to the formation of the MoSe 2 layer due to the MoS 2 layer was established in other works during the synthesis of Cu 2 ZnSn(S,Se) 4 thin films by the selenization of deposited Cu/Sn/ZnS precursors by magnetron sputtering on glass/Mo substrates [34,35].…”

Section: X-ray Analysis Of Thin Filmssupporting

confidence: 65%

Morphology and Crystal Structure of Cu2NiSn(S,Se)4 Thin Films Obtained by an Electrodeposition-Annealing Process

et al. 2022

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Today, an actual task of photovoltaics is the search for new light-absorbing materials for solar cells, which will make them more efficient and economically affordable. Semiconductor Cu2NiSn(S,Se)4 (CNTSSe) thin films are promising materials due to suitable optical and electrical properties. This compound consists of abundant, inexpensive, and low-toxicity elements. However, few results of studying the properties of CNTSSe films have been presented in the literature. This paper presents the results of studying the morphology, phase composition, and crystal structure of the CNTSSe films, which were first obtained by high-temperature annealing of electrodeposited Ni/Cu/Sn/Ni precursors on glass/Mo substrates in chalcogen vapor. The films were studied using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. It has been found that sequential electrochemical deposition makes it possible to obtain the Ni/Cu/Sn/Ni precursors of the required quality for further synthesis of the films. It is shown that high-temperature annealing in chalcogen vapor in air makes it possible to synthesize stable polycrystalline CNTSSe films. The obtained results confirm that the production of CNTSSe films is suitable for use in solar cells by the proposed method, which can be improved by more precise control of the precursor composition and annealing conditions.

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Section: X-ray Analysis Of Thin Filmssupporting

confidence: 65%

Morphology and Crystal Structure of Cu2NiSn(S,Se)4 Thin Films Obtained by an Electrodeposition-Annealing Process

et al. 2022

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Hazardous elements present in coal nanoparticles in a Caribbean port region in Colombia

Neckel

Osorio-Martinez

Pinto

et al. 2022

Science of The Total Environment

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Emergence of flexible kesterite solar cells: progress and perspectives

Sun

Yuan

et al. 2023

npj Flex Electron

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Flexible photovoltaics have been and will be increasingly in demand in modern and future society in various applications. Searching for ideal flexible photovoltaic technologies that can perfectly meet these expanding demands has long been an active branch of photovoltaic research. Flexible kesterite Cu2ZnSn(S,Se)4 (CZTSSe) has emerged in recent years owning to its great potential to be an abundant, low-cost, stable, and high-efficiency ‘green’ photovoltaic material that can be widely deployed with the lowest detrimental environmental impact. Here, we review the recent progress with flexible kesterite solar cells in thin-film and monograin technologies, discuss the key challenges and strategies associated with the flexible substrates, and finally provide the future perspectives on further pushing the efficiency toward commercial-competitive levels.

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A low-temperature X-ray diffraction study of the Cu2ZnSnSe4 thin films

Cited by 3 publications

References 12 publications

Morphology and Crystal Structure of Cu2NiSn(S,Se)4 Thin Films Obtained by an Electrodeposition-Annealing Process

Morphology and Crystal Structure of Cu2NiSn(S,Se)4 Thin Films Obtained by an Electrodeposition-Annealing Process

Hazardous elements present in coal nanoparticles in a Caribbean port region in Colombia

Emergence of flexible kesterite solar cells: progress and perspectives

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