2019
DOI: 10.1016/j.snb.2019.04.061
|View full text |Cite
|
Sign up to set email alerts
|

A low temperature formaldehyde gas sensor based on hierarchical SnO/SnO2 nano-flowers assembled from ultrathin nanosheets: Synthesis, sensing performance and mechanism

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

2
46
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 192 publications
(54 citation statements)
references
References 67 publications
2
46
0
Order By: Relevance
“…[26] SnO/SnO 2 nanoflowers 120 1000 n.a. [34] n.a. : not available Table Supplementary Material Click here to download Supplementary Material: Supplementary information.docx…”
Section: Resultsmentioning
confidence: 99%
“…[26] SnO/SnO 2 nanoflowers 120 1000 n.a. [34] n.a. : not available Table Supplementary Material Click here to download Supplementary Material: Supplementary information.docx…”
Section: Resultsmentioning
confidence: 99%
“…The operating temperature has a crucial effect on the sensing properties of the gas sensor [33]. Many of metal-oxides or SiC-based gas sensors operate at high temperatures up to 600 • C, and typically encounter many challenging issues, such as thermal and long-term stability, sensitivity, reproducibility, and selectivity.…”
Section: Gas-sensor Characteristics With Ch 4 and Co Gasesmentioning
confidence: 99%
“…For example, triangle array or cross-linked network can be formed depending on the plasma etching time of PS spheres through the same processes: (i) self-assemble PS spheres, (ii) plasma etching of PS spheres, (iii) deposit MOS thin film, and (iv) remove PS spheres. Apart from creating more active adsorption sites, forming heterostructure to improve the sensing performance of MOS-based gas sensors has been intensively studied, which is a low cost, environmentalfriendly, and easy-to-implement method [25,[43][44][45][46][47][48]. The sputtering target can be designed by mixing two or more MOS elements, such as SnO 2 /NiO, SnO 2 /ZnO, SnO 2 / WO 3 , etc.…”
Section: Introductionmentioning
confidence: 99%