A low supply voltage SiGe LNA for ultra-wideband frontends

A novel CMOS low-noise amplifier design for 3.1- to 10.6-GHz ultra-wide-band wireless receivers

“…As shown in Fig. 14, the group-delay of the proposed design is not constant due to the employment of LC peaking, but the ps group-delay of this design is still comparable to that of the recently reported UWB LNA designs [21], [30]. The post-layout simulation result of input-referred 1-dB compression point is shown in Fig.…”

An Wideband GaN Low Noise Amplifier in a 3×3 mm2Quad Flat Non-leaded Package

“…This proposed FoM is based on the FoMs in [5] and [7]. In LNA design, if devices have high unity current gain frequency (f T ), low NF can be easily achieved because NF is inverse proportional to f T [8], so that f T is at the denominator in the FoM.…”

“…Because of the high cost of GaN IC technology, the size of chip die is added in the FoM. In this work, the FoM is improved to make fair comparison by including linearity parameter, OIP3, which was not considered in [5] and [7]. When small DC power is used, obviously FoM is high even if OIP3 is low.…”

Review of the State of Art of Tunable Impulse Ultra-Wideband Technology as Integrator for Wireless Sensing and Identifications Short-Range Networks

“…The choice of specific waveform can be driven by system design and application requirements. A qualitative comparison between UWB technology and a typical narrow-band transceiver with regard to antenna, front end, as well as analog and digital basebands is illustrated in Figure 2 and summarized in Table 1 (Muqaibel, 2002;Barras, 2002) [3] [4]. Table 1 summarizes the main points of the comparison between UWB and narrow-band technologies.…”