A novel CMOS low-noise amplifier design for 3.1- to 10.6-GHz ultra-wide-band wireless receivers

Abstract

An ultra-wideband (UWB) 3.1-to 10.6-GHz low-noise amplifier (LNA) employing a common-gate stage for wideband input matching is presented in this paper. Designed in a commercial 0.18-m 1.8-V standard RFCMOS technology, the proposed UWB LNA achieves fully on-chip circuit implementation, contributing to the realization of a single-chip CMOS UWB receiver.The proposed UWB LNA achieves 16 7 0 8 dB power gain with a good input match (S11 9 dB) over the 7500-MHz bandwidth (from 3.1 GHz to 10.6 GHz), and an average noise figure of 4.0 dB, while drawing 18.4-mA dc biasing current from the 1.8-V power supply. A gain control mechanism is also introduced for the first time in the proposed design by varying the biasing current of the gain stage without influencing the other figures of merit of the circuit so as to accommodate the UWB LNA in various UWB wireless transmission systems with different link budgets. Index Terms-Common gate, low-noise amplifier (LNA), RFCMOS, ultra-wideband (UWB), variable gain.

A New CMOS Fully Differential Low Noise Amplifier for Wideband Applications

“…Figure 8 shows the effect of changes in the L S on the input return losses of the proposd LNA. As shown by the S 11 Figure 9 shows the s-parameters of the proposed LNA. The proposed LNA includes return losses of the input and output of lower than -9 dB and an input-output isolation of lower than -38 dB at a bandwidth of 3.5-7.5 GHz.…”

“…Given that ultra-wide band signals have a very low spectral power density, squeezing is rarely considered in Ultra-wideband low-noise amplifiers. But due to wide bandwidth of these system and possible interference signals, the third-order input intersection point (IIP 3 ) parameter is the most important parameter related to linearity [11]. Two-tone test is done for proposed LNA at the frequency of 5.5 GHz with frequency spacing of 1 MHz.…”

A highly attenuative CMOS LNA at 5–6 GHz using negative GM circuit for UWB applications

“…However, the distributed amplifiers usually consume a lot of chip real‐estate and power. The common gate amplifier can also realize wideband input impedance matching by properly selecting the device size and bias current, but this technique suffers from low gain and poor noise figure [4, 5]. Therefore, resistive feedback designs are extensively used owing to their superior broadband characteristics.…”

Design of Low Power CMOS LNA with Current-Reused and Notch Filter Topology for DS-UWB Application

“…Figure 2 shows the circuit with input stage of a common-gate amplifier. The inductor L S is placed between the source of the MOS transistor and the ground terminal forming an LC resonator with the gate-to-source capacitance C gs in a common-gate configuration [4]. The finite output resistance of the transistor also changes the input reflection of the LNA.…”