A Low-Reverse-Recovery-Charge Superjunction MOSFET With P-Base and N-Pillar Schottky Contacts

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

“…However, the bipolar characteristics of body diode mean that device must result in poor reverse recovery performances due to excess minority carries in the drift region, thus causing extra power losses. Over the last few decades, a series of approaches have been proposed to work out this problem [10][11][12][13][14][15][16][17][18][19]. For example, anti-paralleled external diode is the most popular method but it causes extra output capacitance and parasitic inductance [10] [11].…”

“…Carrier lifetime control technology can improve the turn-off characteristics but causes degradations of Ron and drain to source leakage current (IDS) [12] [13]. Another solution is integrating Schottky diode but it causes larger degradations of IDS, integration level, and high temperature characteristics [14][15][16][17][18][19]. Recently, a novel technology for power MOSFET with built-in channel diode (BCD) has been proposed to solve such a problem [20][21][22][23].…”

Novel Approach Toward Body Diode Reverse Recovery Performance Improvement in Superjunction MOSFETs

“…, [18], [19], [20]. To reduce Q rr , lifetime killing methods have been adopted in commercial SJ-MOSFETs [8], [9].…”

“…To reduce Q rr , lifetime killing methods have been adopted in commercial SJ-MOSFETs [8], [9]. Some other methods have also been investigated, such as integrating unipolar diode, and introducing tunneling diode [10], [11], [12], [13], [14], [15], [16], [17], [18], [19], [20]. To improve the softness, a lightly doped N-buffer layer is employed in modern SJ-MOSFETs through it increases the specific-on resistance [21], [22].…”

“…In our previous simulation work, the N-pillar Schottky contact combined with the P-base Schottky contact has been demonstrated to be very effective in reducing Q rr . Nevertheless, the unprotected N-pillar Schottky contact is prone to inducing a huge leakage current and the softness could not be improved by just using the dual Schottky contacts [19]. In this work, we propose a novel SJ-MOSFET structure with dual well-protected Schottky contacts in the cell region and ohm contact in the termination region.…”