A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology

Abstract

This paper presents an ultrawideband low-noise amplifier chip using TSMC 0.18 m CMOS technology. We propose a UWB low noise amplifier (LNA) for low-voltage and low-power application. The present UWB LNA leads to a better performance in terms of isolation, chip size, and power consumption for low supply voltage. This UWB LNA is designed based on a current-reused topology, and a simplified RLC circuit is used to achieve the input broadband matching. Output impedance introduces the LC matching method to reduce power consumption. The measured results of the proposed LNA show an average power gain (S 21) of 9 dB with the 3 dB band from 3 to 5.6 GHz. The input reflection coefficient (S 11) less than −9 dB is from 3 to 11 GHz. The output reflection coefficient (S 22) less than −8 dB is from 3 to 7.5 GHz. The noise figure 4.6-5.3 dB is from 3 to 5.6 GHz. Input third-orderintercept point (IIP 3) of 2 dBm is at 5.3 GHz. The dc power consumption of this LNA is 9 mW under the supply of a 1 V supply voltage. The chip size of the CMOS UWB LNA is 1.03 × 0.78 mm 2 in total.

A 0.7 V, Ultra-Wideband Common Gate LNA with Feedback Body Bias Topology for Wireless Applications

“…A noise cancelling technique was utilized in References [14,23] with a high power consumption of 9.97 mW and 23.23 mW respectively. CS with an FBB technique was used in References [20,26,27], however, the power consumed by the LNA proposed in References [20,26] was greater than 9 mW and 13.0 mW, respectively. Due to the use of the small power supply LNA proposed in References [27] it consumed less power but had S 11 of ≤−5 dB.…”

“…CS with an FBB technique was used in References [20,26,27], however, the power consumed by the LNA proposed in References [20,26] was greater than 9 mW and 13.0 mW, respectively. Due to the use of the small power supply LNA proposed in References [27] it consumed less power but had S 11 of ≤−5 dB. It can be observed from Table 2 that the proposed LNA design had better overall performance in terms of the noise figure, S 11 , S 21 , S 22 , bandwidth and the power consumption.…”

The Design of an Ultra-Low-Power Ultrawideband (4.5GHz-9.5GHz) Low Noise Amplifier in 0.13μm CMOS Technology

“…Criteria such as power consumption, gain, noise figure, stability, and linearity have been mentioned to evaluate the performance of an LNA. Many topologies like common-source with forward body bias, common-source with resistive feedback, and noise cancelling have been utilized to achieve the aforementioned objectives [1][2][3][4][5][6][7][8][9][10][11]. The minimum voltage supply used was 0.6 volts, culminating in the best power gain (S21) and the best third order interface point (IIP3) [9].…”

Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

“…Characterization of high frequency noise for a transistor [1,2] is essential to radio-frequency (RF) circuit designs because generated noise from transistors can determine the minimum signal strength that can be detected. Noise characteristics of a transistor can be dependent on device geometry [3,4].…”