A Low-Power Pixel Circuit Comprising Low-Temperature Poly-Silicon and Oxide TFTs for Liquid Crystal Displays With Panel Self-Refresh Technology

Kim, Jongbin; Chung, Hongsuk; Lee, Seung-Woo

doi:10.1109/led.2020.2990619

Cited by 15 publications

(6 citation statements)

References 24 publications

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“…A range of AOSs have been explored in order to improve mobility, such as increasing the Indium content in a-IGZO films [2,3] . The output current of high-mobility AOSs approaches or even exceeds that of LTPS TFTs [4,5] .…”

Section: Introductionmentioning

confidence: 99%

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

Yan,

Wang,

Sun

et al. 2024

Symp Digest of Tech Papers

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Section: Introductionmentioning

confidence: 99%

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

Yan,

Wang,

Sun

et al. 2024

Symp Digest of Tech Papers

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“…Hence, a -IGZO has established itself as a standard backplane technology in active-matrix organic light-emitting diode (AMOLED) television displays. , However, it was difficult to use a -IGZO for high-end mobile AMOLED displays that require a short selection time due to its higher pixel per inch (ppi) because its mobility was not enough to meet the given tight gate selection duty. For this reason, the low-temperature polycrystalline silicon (LTPS), which has high mobility (>80 cm 2 /(V s)) and excellent bias stability, has been mainly used for backplanes of mobile AMOLED displays. , Currently, low-temperature polycrystalline silicon and oxide (LTPO) technology (which consists of LTPS and IGZO TFT acting as driving and switching transistor, respectively) is being applied as a backplane technology for high-end mobile AMOLED displays. − The hybrid concept of LTPO technology can provide ultrahigh resolution, fast frame rates, and low power consumption simultaneously. However, the difficult fabrication process of LTPO technology remains a drawback that results in high fabrication cost and low yield.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition

Cho

Choi

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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An atomic-layer-deposited oxide nanolaminate (NL) structure with 3 dyads where a single dyad consists of a 2-nm-thick confinement layer (CL) (In 0.84 Ga 0.16 O or In 0.75 Zn 0.25 O), and a barrier layer (BL) (Ga 2 O 3 ) was designed to obtain superior electrical performance in thin-film transistors (TFTs). Within the oxide NL structure, multiple-channel formation was demonstrated by a pile-up of free charge carriers near CL/BL heterointerfaces in the form of the so-called quasi-two-dimensional electron gas (q2DEG), which leads to an outstanding carrier mobility (μ FE ) with band-like transport, steep gate swing (SS), and positive threshold voltage (V TH ) behavior. Furthermore, reduced trap densities in oxide NL compared to those of conventional oxide single-layer TFTs ensures excellent stabilities. The optimized device with the In 0.75 Zn 0.25 O/Ga 2 O 3 NL TFT showed remarkable electrical performance: μ FE of 77.1 ± 0.67 cm 2 /(V s), V TH of 0.70 ± 0.25 V, SS of 100 ± 10 mV/dec, and I ON/OFF of 8.9 × 10 9 with a low operation voltage range of ≤2 V and excellent stabilities (ΔV TH of +0.27, −0.55, and +0.04 V for PBTS, NBIS, and CCS, respectively). Based on in-depth analyses, the enhanced electrical performance is attributed to the presence of q2DEG formed at carefully engineered CL/BL heterointerfaces. Technological computer-aided design (TCAD) simulation was performed theoretically to confirm the formation of multiple channels in an oxide NL structure where the formation of a q2DEG was verified in the vicinity of CL/BL heterointerfaces. These results clearly demonstrate that introducing a heterojunction or NL structure concept into this atomic layer deposition (ALD)-derived oxide semiconductor system is a very effective strategy to boost the carrier-transporting properties and improve the photobias stability in the resulting TFTs.

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“…Thus, the gradually increasing demand for high refresh rate (HRR, ≧ 90 Hz) driving has gone beyond TVs and PCs to smartphones. However, since HRR driving leads to high power consumption and mobile devices are sensitive to the latter, it is therefore necessary to combine both low refresh rates (LRR) and HRR appropriately to compensate for the high HRR power consumption 1 . For example, we can only apply the high-speed driving to moving images such as videos and games, and to scrolling images.…”

Section: Introductionmentioning

confidence: 99%

“…To reduce the increasing power consumption raised from HRR driving, a still image is driven by a conventional normal refresh rate (NRR) of 60 Hz, and LRR also could be applied in standby modes such as an always on display (AoD). However, a change in frame rate can deteriorate image quality of active matrix organic light emitting diode (AMOLED) displays, as the threshold voltage compensation 1 – 4 and the OLED charging depend on the programming time 5 – 8 . In this study, we characterized the image degradation by measuring color and luminance deviations at various frequencies.…”

Section: Introductionmentioning

confidence: 99%

Image quality enhancement in variable-refresh-rate AMOLED displays using a variable initial voltage compensation scheme

Kim

Kim³

et al. 2022

Sci Rep

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In active matrix organic light emitting diode (AMOLED) displays, when a variable refresh rate is applied and the frame rate changes, the image’s color and luminance quality in AMOLED displays deteriorates. The frequency-dependent cognitive differences were experimentally demonstrated by using 6.76″ AMOLED displays. This phenomenon is dependent on the emission time and the data programming time on the frame rate. This degradation of the image quality during the frequency switch could be prevented by applying a variable initial voltage (VINI) to the OLED anode. For a frequency change between 60 and 120 Hz, the measured just noticeable color difference (JNCD) decreased from 7.50 to less than 1.00 in luminance, and from 2.34 to 0.02 in color. As our approach can prevent image quality distortion by utilizing an existing compensation pixel structure without additional compensation steps, it will be a promising technique for improving the picture quality in AMOLED displays.

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A Low-Power Pixel Circuit Comprising Low-Temperature Poly-Silicon and Oxide TFTs for Liquid Crystal Displays With Panel Self-Refresh Technology

Cited by 15 publications

References 24 publications

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition

Image quality enhancement in variable-refresh-rate AMOLED displays using a variable initial voltage compensation scheme

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