A Low Power Low Voltage Rectifier Circuit

Corbishley, P.; Rodriguez‐Villegas, Esther

doi:10.1109/mwscas.2006.381779

Cited by 9 publications

(4 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In a conventional small signal rectifier circuit, an amplifier is usually needed to amplify the signal first. Due to the high rectification ratio and low turn-on voltage, the diode presented here can be used in a small signal rectifier to simplify the circuit . The device-based half-wave rectifier circuit and its performance are demonstrated in Figure e,f, respectively.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Versatile Electronic Devices Based on WSe₂/SnSe₂ Vertical van der Waals Heterostructures

Xiao

2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far away from existing technologies'. Here we report high performance heterostructure devices based on vertically stacked tungsten diselenide and tin diselenide. Due to the unique band alignment and the atomic thickness of the material, both charge carrier transport and energy barrier can be effectively modulated by the applied electrical field. As a result, the heterostructure devices show superb characteristics, with a high current on/off ratio of ~3 x 10 8 , an average subthreshold slope of 126 mV/decade over five decades of current change due to band to band tunneling, an ultra-high rectification ratio of ~3 x 10 8 and a current density of more than 10 4 A/cm 2 . Further, a small signal half wave rectifier circuit based on majority carrier transport dominated diode is successfully demonstrated, showing great potential in future high speed electronic applications.

show abstract

Section: Resultsmentioning

confidence: 99%

“…Due to the high rectification ratio and low turnon voltage, the diode presented here can be used in a small signal rectifier to simplify the circuit. 45 The device-based halfwave rectifier circuit and its performance are demonstrated in Figure 3e,f, respectively. Signals with amplitudes of 0.4 and 2 V are successfully rectified.…”

Section: Resultsmentioning

confidence: 99%

Versatile Electronic Devices Based on WSe₂/SnSe₂ Vertical van der Waals Heterostructures

Xiao

2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…RF‐DC conversion efficiency is inversely proportional to diode built‐in voltage. The CMOS full bridge's built‐in voltage is smaller than conventional diode built‐in voltage, about 0.7 V . The circuit schematic of the CMOS full bridge rectifier is shown in Figure (a) .…”

Section: Circuit Designmentioning

confidence: 99%

A matched RF charger for wireless RF power harvesting system

Lee

Jung

et al. 2015

Micro & Optical Tech Letters

View full text Add to dashboard Cite

In this article, special type of RF Charger is proposed for Wireless RF power harvesting system. RF charger is consisted of impedance matching circuit, full bridge CMOS rectifier, active diode, hysteresis switch, and DC–DC booster. The proposed RF charger is to obtain maximum available RF power through adjusting impedance matching circuitries. The proposed RF charger is matched to Korean WCDMA frequency band from 1960 to 1980 MHz. The minimum input RF power for charging 5 V battery is −10 dBm. The RF to DC conversion efficiency of the RF charger is 81% at 30 mA load current with 5 V battery, and the maximum output voltage is 5.5 V. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1622–1625, 2015

show abstract

“…The rectifier unit is used to efficiently harvest energy from a piezoelectric harvester by periodically not only discharging the internal capacitor but also flipping the bias voltage across the capacitor. For low-voltage low-power applications a subthreshold MOSFET based Class-AB rectifier is reported in [9] with a power consumption of less than 600 nW and 60 dB dynamic range for a supply voltage of 1 V. A CMOS full wave rectifier with built-in backward telemetry has been presented for biomedical applications [10]. The scheme utilizes separate n-wells and an additional pair of transistors to dynamically bias the devices as well as reduce the dropout voltages of the conducting MOSFETs resulting in an improved overall efficiency.…”

Section: Introductionmentioning

confidence: 99%

A low-loss rectifier unit for inductive-powering of biomedical implants

Haider

Massoud

2011

2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip

View full text Add to dashboard Cite

Biomedical implants have been developed in the recent years with a focus for continuous and real-time monitoring of physiological parameters. Battery-less operation of the implanted unit requires energy harvesting from an inductive link or from the neighboring environment. For efficient conversion of harvested energy to a usable DC level, a rectifier block is employed. However conventional CMOS full bridge rectifier incurs a significant amount of power loss and lowers the overall efficiency of the powering system. In this work a cross-coupled MOSFET based LC oscillator structure has been presented as a modified rectifier circuit. Cross-coupled structure minimizes the loss of the MOS switches and LC tank circuit boosts up the output DC level. The rectifier unit has been designed and simulated using 0.5-µm standard CMOS process. For simulation purposes, different biomedical frequency bands are used to validate the effectiveness of the proposed circuit. Simulation results show that the proposed rectifier circuit can achieve 75% PCE compared to the conventional full bridge CMOS rectifier of only 3% PCE.I.

show abstract

A Low Power Low Voltage Rectifier Circuit

Cited by 9 publications

References 3 publications

Versatile Electronic Devices Based on WSe₂/SnSe₂ Vertical van der Waals Heterostructures

Versatile Electronic Devices Based on WSe₂/SnSe₂ Vertical van der Waals Heterostructures

A matched RF charger for wireless RF power harvesting system

A low-loss rectifier unit for inductive-powering of biomedical implants

Contact Info

Product

Resources

About

A Low Power Low Voltage Rectifier Circuit

Cited by 9 publications

References 3 publications

Versatile Electronic Devices Based on WSe2/SnSe2 Vertical van der Waals Heterostructures

Versatile Electronic Devices Based on WSe2/SnSe2 Vertical van der Waals Heterostructures

A matched RF charger for wireless RF power harvesting system

A low-loss rectifier unit for inductive-powering of biomedical implants

Contact Info

Product

Resources

About

Versatile Electronic Devices Based on WSe₂/SnSe₂ Vertical van der Waals Heterostructures

Versatile Electronic Devices Based on WSe₂/SnSe₂ Vertical van der Waals Heterostructures