A low power implementation for the transmit path of a UWB transceiver

Aggarwal, Sudhir; Leenaerts, D.M.W.; Beek, C.Z. van de; Weide, G. van der; Harish, K.S.; Bergervoet, J.; Landesman, A.; Zhang, Y.; Razzell, C.; Waite, H.; Roovers, R.

doi:10.1109/cicc.2005.1568629

Cited by 9 publications

(7 citation statements)

References 3 publications

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“…Here, V CL is the carrier leakage voltage; R L is the load of modulator and I OS is the baseband offset current to the modulator. Equation (9) shows that the carrier leakage is linearly proportional to the offset current caused by mismatch.…”

Section: Sideband and Carrier Leakage Suppressionmentioning

confidence: 99%

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A 3.1–4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB

Zheng

Ren

et al. 2009

J. Semicond.

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A fully integrated low power RF transmitter for a WiMedia 3.1–4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. With a separate transconductance stage, the quadrature up-conversion modulator achieves high linearity with low supply voltage. The co-design of different resonant frequencies of the modulator and the differential to single (D2S) converter ensures in-band gain flatness. By means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided-by-2 divider is used for carrier signal generation. The measurement results show an output power between −10.7 and −3.1 dBm with 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18 μm RF CMOS process with an area of 1.74 mm2 and only consumes 32 mA current (at 1.8 V) including the test associated parts.

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Section: Sideband and Carrier Leakage Suppressionmentioning

confidence: 99%

“…The I path schematic of the proposed modulator is shown in Fig. 8(b) [9] . The up-conversion mixer adopts double balanced Gilbert topology to suppress the carrier leakage and the transconductance stage uses source resistor degeneration to improve the linearity.…”

Section: Circuit Design 31 Low Voltage High Linearity Modulatormentioning

confidence: 99%

A 3.1–4.8 GHz transmitter with a high frequency divider in 0.18 μm CMOS for OFDM-UWB

Zheng

Ren

et al. 2009

J. Semicond.

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“…Transistor M4 delivers an output level of −10 dBm. A straightforward approach has been used in [14], resulting in a −7 dBm output power level. By varying the bias, the gain of the amplifier can be varied with 6 dB.…”

Section: Rf Transmitter Building Blocksmentioning

confidence: 99%

“…Where in [9] an up-conversion circuit has been used based on resistively degenerated passive mixers along with a current feedback amplifier, two single-side-band Gilbert mixers have been used in [14]. The needed voltage-tocurrent converter as under stage for the Gilbert mixer core also implements a gain variation mechanism.…”

Section: Rf Transmitter Building Blocksmentioning

confidence: 99%

“…The measured performance is provided in Table 1 [21], indicating that low noise figures can be achieved for complete receivers. The transmit chain is published in [14] and features wideband elliptic baseband filters, a VGA with dynamic range of 12 dB, an up-conversion mixer, and an RF output stage with a power of −7 dBm. The current consumption is 43 mA at 2.7 V for the complete transmit path.…”

Section: Rf Transceivers For Mb-ofdm Uwbmentioning

confidence: 99%

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Transceiver Design for Multiband OFDM UWB

Leenaerts

2006

J Wireless Com Network

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Ultra-wideband (UWB) is an emerging broadband wireless technology enabling data rates up to 480 Mbps. This paper provides an overview of recent design approaches for several circuit functions that are required for the implementation of multiband OFDM UWB transceivers. A number of transceiver and synthesizer architectures that have been proposed in literature will be reviewed. Although the technology focus will be on CMOS, also some design techniques implemented in BiCMOS technologies will be presented.

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