A Low-Power Broadband 200 GHz Down-Conversion Mixer with Integrated LO-Driver in 0.13 &lt;formula formulatype="inline"&gt;&lt;tex Notation="TeX"&gt;$\mu$&lt;/tex&gt;&lt;/formula&gt;m SiGe BiCMOS

Fritsche, David; Leufker, Jan Dirk; Tretter, Gregor; Carta, Corrado; Ellinger, Frank

doi:10.1109/lmwc.2015.2451353

Cited by 24 publications

(8 citation statements)

References 7 publications

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“…Since the NF of the conventional mixer can hardly satisfy the system requirements [2,[4][5][6], a high-performance LNA plays an important role in the sub-THz receiver, and it needs to be elaborately designed to meet the required NF specification. To effectively reduce the noise impact from the mixer, the gain of the LNA needs to exceed 20 dB.…”

Section: Three-stage Lnamentioning

confidence: 99%

“…In recent years, the rapid development of silicon-based technology has provided a low-cost solution to applications operating in the millimetre wave (MMW) and sub-THz frequency ranges (>100 GHz), such as high-data-rate wireless communication, imaging, radar and medical instruments [1][2][3][4][5][6][7][8]. SiGe-based systems with outstanding performance have attracted widespread attention and become a good substitute for their III-V semiconductor counterparts.…”

Section: Introductionmentioning

confidence: 99%

“…Several MMW receivers have been reported and could be classified into two categories: the harmonic-mixer-based receiver [1,2] and the fundamental-mixer-based receiver [3][4][5][6][7][8]. The harmonic-mixer structure relieves the demand of local oscillator (LO) at the expense of poor conversion gain (CG) and NF [2].…”

Section: Introductionmentioning

confidence: 99%

“…The harmonic-mixer structure relieves the demand of local oscillator (LO) at the expense of poor conversion gain (CG) and NF [2]. The fundamental mixer structure exhibits the advanced RF performance if the LO power is sufficient to implement the saturated switching of the mixing core [3][4][5][6]. Recently, on-chip multiplier chains in the advanced SiGe process have been demonstrated to generate >5 dBm output power up to 200 GHz, which is high enough to drive the active fundamental mixers [4,6].…”

Section: Introductionmentioning

confidence: 99%

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Compact low‐power 154 GHz receiver front‐end in 0.13 µm SiGe BiCMOS

Chen

et al. 2020

IET Microwaves, Antennas & Propagation

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This study presents a compact 154 GHz receiver fabricated in a 0.13 µm SiGe BiCMOS process, which is composed of a three‐stage low‐noise amplifier and an improved micromixer. In order to mitigate the intrinsic DC and RF imbalance of the basic micromixer, the resistor compensation is implemented at one branch of the RF paths, which achieves superior performance. Consisting of a common‐emitter and two differential cascade stages, the separate low‐noise amplifier achieves a small‐signal gain of 21.8 dB at 155 GHz with a 3 dB bandwidth of 22 GHz. The entire receiver exhibits a maximum conversion gain of 23.8 dB at 154 GHz with a 3 dB bandwidth of 16.5 GHz. The minimum single‐sideband noise figure is measured to be 11.4 dB at 149 GHz and remains below 15 dB from 142 to 160 GHz. Exhibiting high gain, low‐noise figure and considerably high bandwidth, the characterised receiver consumes competitive low power of 70.7 mW and occupies the smallest core area of only 0.12 mm2 to the best of our knowledge.

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Section: Three-stage Lnamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Compact low‐power 154 GHz receiver front‐end in 0.13 µm SiGe BiCMOS

Chen

et al. 2020

IET Microwaves, Antennas & Propagation

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“…Now, we discuss an active 200 GHz fundamental downconversion mixer [7]. Mixers are required to convert the high radio frequencies to the lower intermediate frequencies suited for further processing.…”

Section: Ghz Bicmos Downconversion Mixermentioning

confidence: 99%

Review of Millimeter-Wave Integrated Circuits With Low Power Consumption for High Speed Wireless Communications

et al. 2016

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In this paper we review high-speed radiofrequency integrated circuits operating up to 210 GHz and present selected state-of-the-art circuits with leading-edge performance, which we have designed at our chair. The following components are discussed employing bipolar complementary metal oxide semiconductors (BiCMOS) technologies: a 200 GHz amplifier with 17 dB gain and around 9 dB noise figure consuming only 18 mW, a 200 GHz down mixer with 5.5 dB conversion gain and 40 mW power consumption, a 190 GHz receiver with 47 dB conversion gain and 11 dB noise figure and a 60 GHz power amplifier with 24.5 dBm output power and 12.9 % power added efficiency (PAE). Moreover, we report on a singlecore flash CMOS analogue-to-digital converter (ADC) with 3 bit resolution and a speed of 24 GS/s. Finally, we discuss a 60 GHz on-off keying (OOK) BiCMOS transceiver chip set. The wireless transmission of data with 5 Gb/s at 42 cm distance between transmitter and receiver was verified by experiments. The complete transceiver consumes 396 mW.

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A High Conversion Gain 210-GHz InP DHBT Sub-Harmonic Mixer Using Gain-Enhanced Structure

Zhang

Xiao

et al. 2019

IEEE Access

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In this paper, we present a novel gain-enhanced sub-harmonic mixer based on 0.5-µm emitter width InGaAs/InP double heterojunction bipolar transistors (InP DHBTs). The proposed mixer consists of a transconductance stage and a gain-enhanced stage. A common-emitter transistor is used in the first stage to realize the sub-harmonic mixing while another common-emitter transistor is used in the second stage to remix the f LO+IF and f IF and also amplify the f 2LO+IF . For further verification, a transconductance mixer and a gain-enhanced mixer were designed and fabricated. Compared with the transconductance mixer, the gain-enhanced mixer exhibits a 6.8-dB higher conversion gain with 2-dB lower LO input power and a peak up-conversion gain of 9 dB at 213 GHz with f IF = 1 GHz, f LO = 106 GHz, and P IF = −26 dBm P LO = 3 dBm. To our best knowledge, the gain-enhanced mixing structure is proposed for the first time.INDEX TERMS InGaAs/InP, DHBT, sub-harmonic mixer, gain-enhanced structure.

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A Low-Power Broadband 200 GHz Down-Conversion Mixer with Integrated LO-Driver in 0.13 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m SiGe BiCMOS

Cited by 24 publications

References 7 publications

Compact low‐power 154 GHz receiver front‐end in 0.13 µm SiGe BiCMOS

Compact low‐power 154 GHz receiver front‐end in 0.13 µm SiGe BiCMOS

Review of Millimeter-Wave Integrated Circuits With Low Power Consumption for High Speed Wireless Communications

A High Conversion Gain 210-GHz InP DHBT Sub-Harmonic Mixer Using Gain-Enhanced Structure

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