Abstract:This study presents a compact 154 GHz receiver fabricated in a 0.13 µm SiGe BiCMOS process, which is composed of a three‐stage low‐noise amplifier and an improved micromixer. In order to mitigate the intrinsic DC and RF imbalance of the basic micromixer, the resistor compensation is implemented at one branch of the RF paths, which achieves superior performance. Consisting of a common‐emitter and two differential cascade stages, the separate low‐noise amplifier achieves a small‐signal gain of 21.8 dB at 155 GHz… Show more
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