A low-power 57-to-66GHz transceiver in 40nm LP CMOS with &amp;#x2212;17dB EVM at 7Gb/s

Vidojkovic, Vojkan; Mangraviti, Giovanni; Khalaf, Khaled; Szortyka, Viki; Vaesen, Kristof; Thillo, Wim Van; Parvais, B.; Libois, Michael; Thijs, S.; Long, John R.; Soens, Charlotte; Wambacq, Piet

doi:10.1109/isscc.2012.6177011

Cited by 41 publications

(18 citation statements)

References 4 publications

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“…2. To observe the relationship directly, an approximate equation from (1)-(3) describes the radius of the circle with the small load impedance condition is (4) Based on this equation, the radius is increased when is increased. The comparison between exact and approximate equation are plotted in Fig.…”

Section: A Bandwidth Consideration Under Low Load Impedancementioning

confidence: 99%

See 1 more Smart Citation

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Hsiao

Tsai

Liao

et al. 2013

IEEE Trans. Microwave Theory Techn.

102

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In this paper, we propose a design method of multi-way combining networks with impedance transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output power and wideband performance simultaneously in millimeter-wave frequency. Based on the proposed methodology, three power amplifiers are designed and fabricated in V-band, W-band, and D-band using 65-nm CMOS technology. With 1.2-V supply, the saturation powers of these power amplifiers are 23.2 dBm, 18 dBm and 13.2 dBm at 64 GHz, 90 GHz, and 140 GHz, with 25.1-GHz, 26-GHz, and 30-GHz 3-dB bandwidth, respectively. Compared with the published MMW amplifiers, these PAs achieve high output power and wide band performances simultaneously, and the ouput power levels is the state-of-the-art performance at these frequencies.Index Terms-CMOS, high output power, impedance transformation, millimeter-wave, power amplifier, power combining, wideband.

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Section: A Bandwidth Consideration Under Low Load Impedancementioning

confidence: 99%

“…M ILLIMETER-WAVE (MMW) wireless applications attract wide attention in recent years [1]- [4]. With the progress of the CMOS processes, the gate length of a transistor is minimized, which makes the CMOS devices operating in MMW possible.…”

Section: Introductionmentioning

confidence: 99%

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Hsiao

Tsai

Liao

et al. 2013

IEEE Trans. Microwave Theory Techn.

102

View full text Add to dashboard Cite

show abstract

“…State-of-the-art results, dealing with high data rates and low power consumption simultaneously, achieve up to 10 Gbitls [1][2][3] and consume at least around 20 mW. The designs use both, simple and more complex modulation schemes, even though the best energy-to-bit efficiencies were achieved with binary amplitude-shift keying (BASK) [1,4].…”

Section: Introductionmentioning

confidence: 99%

Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier

Thome

Leuther

Maroldt

et al. 2014

2014 IEEE MTT-S International Microwave Symposium (IMS2014)

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In this paper a low-power wireless data transmitter MMIC at 113 GHz with data rates up to 25 Gbit/s is presented. The power consumption of the transmitter MMIC is 9.48mW and the output power is about 4.3 dBm. The measured bit error rate is less than 1 * 10(-12) for at least up to 13 Gbit/s. The transmitter is a fully integrated MMIC based on a 50nm InGaAs metamorphic HEMT technology. The circuit consists of a lowpower voltage controlled oscillator as signal generator and a low-loss high-speed switch as amplitude modulator, only needing a single-ended data input signal. The whole transmitter MMIC has a size of only 1.25 * 1mm(2)

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“…For lower power consumption and smaller chip area, direct-conversion transceivers have been also reported [5]- [8]. However, it is still challenging to achieve more than 10 Gb/s data rate due to (1) I/Q mismatch (2) gain flatness (3) phase noise, which degrade the error vector magnitude (EVM) performance.…”

Section: Introductionmentioning

confidence: 99%

“…However, it is still challenging to achieve more than 10 Gb/s data rate due to (1) I/Q mismatch (2) gain flatness (3) phase noise, which degrade the error vector magnitude (EVM) performance. The directconversion transceivers in [6]- [8] employ a quadrature injection-locked oscillator for the phase noise improvement. The issues of I/Q mismatch and gain flatness are still remaining especially for achieving higher data rate with wider bandwidth.…”

Section: Introductionmentioning

confidence: 99%

A digitally-calibrated 20-Gb/s 60-GHz direct-conversion transceiver in 65-nm CMOS

Kawai

Minami

Tsukui

et al. 2013

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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This paper presents a digitally-calibrated 60-GHz direct-conversion transceiver. To improve the error vector magnitude (EVM) performance over the wide bandwidth, a digital calibration technique is applied. The 60-GHz transceiver implemented by 65 nm CMOS achieves the maximum data rates of 20 Gb/s in 16QAM mode. The transmitter and receiver consume 351 mW and 238 mW from 1.2V supply, respectively. As a 60-GHz transceiver, the best Tx-to-Rx EVM performance of −26.2 dB is achieved for 16QAM 7Gb/s data rate.

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A low-power 57-to-66GHz transceiver in 40nm LP CMOS with −17dB EVM at 7Gb/s

Cited by 41 publications

References 4 publications

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier

A digitally-calibrated 20-Gb/s 60-GHz direct-conversion transceiver in 65-nm CMOS

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