This paper reports on an efficient transmitter monolithic microwave integrated circuit (TX MMIC) suitable for high-speed wireless communication. In order to achieve high output power, the TX is based on a direct modulation approach, containing a stacked-FET voltage-controlled oscillator (VCO) and an amplitude modulator. Thus, the modulation scheme is based on amplitude-shift keying (ASK). The MMIC utilizes the Fraunhofer IAF 50nm gate-length metamorphic high-electronmobility transistor (mHEMT) technology. The stacked-FET oscillator generates the carrier signal and achieves an output power of about 14 dBm. The carrier frequency can be tuned from 87.8 to 98.2 GHz. Due to the FET-stacking approach the amplitude modulator can be simplified to a single-pole, single-throw (SPST) switch. Hence, the transmitter MMIC achieves a peak output power of 12:5dBm and a maximum data rate of 18 Gbit/s. The maximum continuous wave (CW) efficiency of the entire TX MMIC yields 17.6 %