A Low-Phase-Noise 77-GHz FMCW Radar Transmitter With a 12.8-GHz PLL and a &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\times$&lt;/tex-math&gt; &lt;/inline-formula&gt;6 Frequency Multiplier

Song, Junesol; Cui, Chenglin; Kim, Seong-Kyun; Kim, Byung‐Sung; Nam, Sangwook

doi:10.1109/lmwc.2016.2574829

Cited by 38 publications

(12 citation statements)

References 11 publications

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“…Nevertheless, at the state of the art, dual-band operation is typically achieved by means of LC VCOs with switched components, such as switched capacitor (SC) [16], switched inductor (SL) [17], or switched core [18], as schematically shown in Fig. 6(a)-(c), respectively.…”

Section: A Vco Designmentioning

confidence: 99%

A W-Band Transmitter for Automotive Radar Sensors in 28-nm FD-SOI CMOS

Papotto

Parisi

Finocchiaro

et al. 2023

IEEE Trans. Microwave Theory Techn.

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This article presents a 77-GHz transmitter (TX) in a 28-nm fully depleted silicon-on-insulator CMOS technology for automotive radar applications. The circuit has been designed to simultaneously fulfill both short-/medium-range (S/MR) and long-range (LR) operations. It exploits an LO frequency doubling architecture, which allows preventing voltage-controlled oscillator (VCO) pulling effects for improved phase noise (PN) performance. The proposed TX comprises a 38-GHz VCO driving a frequency doubler and then a current-combining two-path power amplifier. The VCO takes advantage of a novel tank architecture to cope S/MR and LR requirements with an effective and silicon area-saving solution. The proposed TX also features a feedback loop that allows properly setting the power delivered to the output load. It exhibits a 5-GHz bandwidth, ranging from 76 to 81 GHz, with a PN performance as low as −93 dBc/Hz at a 1-MHz offset frequency from a 77-GHz carrier. It is also able to deliver a maximum output power as high as 17.5 dBm with a dynamic control range of around 13 dB. The overall power consumption is 351 mW.

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Section: A Vco Designmentioning

confidence: 99%

A W-Band Transmitter for Automotive Radar Sensors in 28-nm FD-SOI CMOS

Papotto

Parisi

Finocchiaro

et al. 2023

IEEE Trans. Microwave Theory Techn.

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“…Various frequency synthesizer architectures based on fractional-N PLLs have been reported. They include: a PLL with the fundamental frequency VCO or DCO [5,10,12,13,26], a PLL with a push-push VCO [27], a PLL and a frequency multiplier [14,16,[28][29][30], and a PLL tied with an injection-locked oscillator [31]. Each of these oscillator architectures and methods have their own pros and cons which are summarized in [26].…”

Section: Fmcw Radar Transmittersmentioning

confidence: 99%

“…Recently, the FMCW radars drew considerable attention [10][11][12][13][14][15][16][17][18][19][20][21], partially owing to their high integration potential. Although the main driver in developing these small footprint solutions was the automotive industry [1], a gradual breakthrough into other spheres is evident.…”

Section: Introductionmentioning

confidence: 99%

On fundamental operating principles and range-doppler estimation in monolithic frequency-modulated continuous-wave radar sensors

Milovanović

2018

FACTA U EE

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In an overview of Horizontal Current Bipolar Transistor (HCBT) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit f T and f max of 51 GHz and 61 GHz and f T BV CEO product of 173 GHzV that are among the highest-performance implanted-base, silicon bipolar transistors. HBCT is integrated with CMOS in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. Due to its specific structure, the charge sharing effect can be employed to increase BV CEO without sacrificing f T and f max. Moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage HCBTs with breakdowns up to 36 V integrated in the same process flow with high-speed devices, i.e. at zero additional costs. Double-balanced active mixer circuit is designed and fabricated in HCBT technology. The maximum IIP3 of 17.7 dBm at mixer current of 9.2 mA and conversion gain of-5 dB are achieved.

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“…As an injection-locked oscillator, a circuit using a ring oscillator [14,15,16,17,18,19] and an LC oscillator [20,21,22,23,24,25,26,27,28,29,30,31,32] can be considered. A ring oscillator has a wider locking range than an LC oscillator, however, in the case of an injection-locked ring oscillator, it is difficult to achieve high-frequency operation due to it depending on the delay of the transistor.…”

Section: Introductionmentioning

confidence: 99%

Study of 18.2-42.0GHz injection-locked frequency doubler with transformer input

Hashimoto

Kaneda

Komoku

et al. 2023

IEICE Electron. Express

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This paper presents ultra-wideband 18.2-42.0 GHz LC injectionlocked frequency doubler (ILFD) with transformer inputs. To expand the locking range, the proposed ILFD incorporates the transformer connected to the source of the gain-cell transistor to obtain high linearity of the input circuitry, moreover, the input matching frequency shifts from the free-run frequency of the oscillator. The measured maximum locking range exhibited 79.1% from 18.2 GHz to 42.0 GHz output at 0 dBm input power and the locked phase noise at 1MHz offset from 28 GHz carrier frequency was −112.1 dBc/Hz under 1.7 mW power consumption. Also, the lowest locked phase noise at 1 MHz offset from the carrier was −122.8 dBc/Hz under 21.2 mW power consumption, and it was only 2.2 dB degraded from the theoretical value. The process technology used in this work was TSMC-180nm CMOS.

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A Low-Phase-Noise 77-GHz FMCW Radar Transmitter With a 12.8-GHz PLL and a <inline-formula> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula>6 Frequency Multiplier

Cited by 38 publications

References 11 publications

A W-Band Transmitter for Automotive Radar Sensors in 28-nm FD-SOI CMOS

A W-Band Transmitter for Automotive Radar Sensors in 28-nm FD-SOI CMOS

On fundamental operating principles and range-doppler estimation in monolithic frequency-modulated continuous-wave radar sensors

Study of 18.2-42.0GHz injection-locked frequency doubler with transformer input

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