A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process

Field, Ryan M.; Lary, Jenifer; Cohn, John R.; Paninski, Liam; Shepard, Kenneth L.

doi:10.1063/1.3518473

Cited by 35 publications

(20 citation statements)

References 15 publications

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“…20 shows the distribution of DCR throughout the array. The overvoltage for this measurement is 2.5 V and is consistent with the measurements taken in [20].…”

Section: Imaging Array Performancesupporting

confidence: 82%

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A 100 fps, Time-Correlated Single-Photon-Counting-Based Fluorescence-Lifetime Imager in 130 nm CMOS

Field

Realov

Shepard

2014

IEEE J. Solid-State Circuits

Self Cite

129

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A fully-integrated single-photon avalanche diode (SPAD) and time-to-digital converter (TDC) array for high-speed fluorescence lifetime imaging microscopy (FLIM) in standard 130 nm CMOS is presented. This imager is comprised of an array of 64-by-64 SPADs each with an independent TDC for performing time-correlated single-photon counting (TCSPC) at each pixel. The TDCs use a delay-locked-loop-based architecture and achieve a 62.5 ps resolution with up to a 64 ns range. A data-compression datapath is designed to transfer TDC data to off-chip buffers, which can support a data rate of up to 42 Gbps. These features, combined with a system implementation that leverages a x4 PCIe-cabled interface, allow for demonstrated FLIM imaging rates at up to 100 frames per second.Index Terms-Fluorescence lifetime imaging microscopy (FLIM), imaging, single-photon avalanche diodes (SPADs), time-correlated single-photon counting (TCSPC), time-to-digital converter (TDC).

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“…20 shows the distribution of DCR throughout the array. The overvoltage for this measurement is 2.5 V and is consistent with the measurements taken in [20].…”

Section: Imaging Array Performancesupporting

confidence: 82%

“…The SPADs used in this design are the same as those reported by the authors in [20]. Each pixel contains one octagonal SPAD with a 5-m-diagonal active area and the pixel-level circuitry for control of the SPAD (see Fig.…”

Section: B Spad Arraymentioning

confidence: 97%

A 100 fps, Time-Correlated Single-Photon-Counting-Based Fluorescence-Lifetime Imager in 130 nm CMOS

Field

Realov

Shepard

2014

IEEE J. Solid-State Circuits

Self Cite

129

View full text Add to dashboard Cite

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“…One could also imagine making use of integrated silicon nanophotonic waveguides and grating couplers to produce quantum networks with ions and photonic interconnects on a chip [160,170].…”

Section: Resultsmentioning

confidence: 99%

“…Reproduced from Ref. [159] CMOS-based electronics and photonics [160,161] for ion control and readout. A largescale, integrated optics architecture might have single-mode waveguides distributing light to various locations in a dielectric layer in the same chip as the trap electrodes, and focusing grating couplers directing the light, through gaps in the trap electrodes to µm-scale focuses at the ion locations.…”

Section: A Quantum System Built With Classical Computer Partsmentioning

confidence: 99%

Technologies for trapped-ion quantum information systems

Eltony

Gangloff

Shi

et al. 2016

Quantum Inf Process

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Scaling up from prototype systems to dense arrays of ions on chip, or vast networks of ions connected by photonic channels, will require developing entirely new technologies that combine miniaturized ion trapping systems with devices to capture, transmit, and detect light, while refining how ions are confined and controlled. Building a cohesive ion system from such diverse parts involves many challenges, including navigating materials incompatibilities and undesired coupling between elements. Here, we review our recent efforts to create scalable ion systems incorporating unconventional materials such as graphene and indium tin oxide, integrating devices like optical fibers and mirrors, and exploring alternative ion loading and trapping techniques.

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“…An array of p-i-n diodes is then fabricated from this material and hybridized to a complementary metal oxide semiconductor (CMOS) readout array. There have also been reports of wide bandgap photodiode arrays with gain [1][2][3]. These detectors still suffer from higher defect density, higher noise, and poor uniformity in comparison with silicon detectors.…”

Section: Introduction and Brief Review Of Uv Detectionmentioning

confidence: 99%

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

et al. 2012

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We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.

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A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process

Cited by 35 publications

References 15 publications

A 100 fps, Time-Correlated Single-Photon-Counting-Based Fluorescence-Lifetime Imager in 130 nm CMOS

A 100 fps, Time-Correlated Single-Photon-Counting-Based Fluorescence-Lifetime Imager in 130 nm CMOS

Technologies for trapped-ion quantum information systems

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

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