A Low Noise MIC GaAsFET Amplifier for 4 GHz Radio

Knerr, R.H.; Swan, C.B.

doi:10.1109/mwsym.1977.1124403

Cited by 3 publications

(2 citation statements)

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“…The stability factor KT and the maximum available gain GT of feedback structure are given by [3]. By controlling the feedback parameters YV., a feedback network can be found that makes the device unconditionaliy stable (KT > 1), obtaining a gain given by (2), and lowering the S and ST2 parameters. In a recent and more extensive paper [4] we have described in detail a graphical method to obtain the required YVj parameters.…”

Section: Basic Theorymentioning

confidence: 99%

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Broadband Design of Microwave Power MESFET Amplifiers using Negative Feedback Techniques

Pérez¹,

Ortega

1981

11th European Microwave Conference, 1981

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A new method is presented which allows the design of a medium power MESFET amplifier stage in the 3.7 -4.2 GHz communication band using a simple and universal feedback network. Using a commercially avalaible Nippon Electric Co. NE-464194 MESFET, an amplifier stage has been constructed using thick-film microstrip circuitry. A gain of 8 ± 0.3 dB has been obtained, with input and output VSWR less than 2. Power output at 1 dB compression is 22.5 dBm with an 3er O.I.P. of 33 dBm. Noise figure is 4.7 dB. The method is applicable to other types of MESFET.

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Section: Basic Theorymentioning

confidence: 99%

“…This makes useless the concepts of finite maximum available gain and simultaneous conjugate matching. Normal broadband design with this type of MESFET is difficult, requiring a lot of computer work or using balanced configurations or the insertion of isolators [1], [2].…”

Section: Introductionmentioning

confidence: 99%