A low dark current, large bandwidth Mott-barrier photodetector fabricated by quasi-ternary growth of GaAs

Schumacher, Hermann; Narozny, P.; Werres, C.; Beneking, H.

doi:10.1109/edl.1986.26280

Cited by 7 publications

(1 citation statement)

References 5 publications

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“…Additionally the density of deep traps is reduced to under the detection limit because the interface acts as a gettering layer. As a result not only the electric data, lifetime, mobility, diffusion length are improved, but also the overall uniformity over the surface is positively influenced, the scattering of the relevant electric data becomes orders of magnitude smaller (10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22). The reason for this exceptional behavior is that the mismatch Aa/a of 10-4-10 -3 does not create a strong, strain relaxing dislocation network but just at the beginning of that the high strain causes the threading dislocations to bow sideways leading to better and better material in the grown epitaxial layer.…”

Section: Crystal Growthmentioning

confidence: 99%

III–V Technology: The Key for Advanced Devices

Beneking

1989

J. Electrochem. Soc.

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The state of the art of the processing of III–V compounds accentuating normalGaAs and normalInP devices is reviewed. The problems are discussed which limit the reliability of bulk materials. It is shown that the application of strained layer epitaxy allows a quality enhancement by achieving low defect and trap densities as well as greater uniformity as in the case of untreated wafers. For modern devices thin layer epitaxy below 10 nm, atomic layer epitaxy, and selective growth are of high importance. Data are given for different growth procedures including laser stimulated growth, with emphasis on low pressure MOVPE. The processing steps are discussed for lateral and vertical configurations including ion implantation, optical and E‐beam lithography, and dry etching procedures. The limits are envisaged.

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