A long-channel MOSFET model

Wiele, F. Van de

doi:10.1016/0038-1101(79)90001-7

Cited by 96 publications

(18 citation statements)

References 6 publications

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“…Two altematives are currently available, namely surface potential models, based on (3), and inversion charge models, based on (4 Substituting (5) and (7) into (3) [13], but the final expression is rather cumbersome. The result can be simplified by noting that the last term in the right-hand side of (8) is relevant for small Q'i only (weak inversion) [15]. The application of this approximation to (8) results [ 15] in: (9) Integration of (9) is straightforward, the result being known as Brews' charge-sheet model [14].…”

Section: Pao and Sah Exact I-v Modelmentioning

confidence: 95%

“…The result can be simplified by noting that the last term in the right-hand side of (8) is relevant for small Q'i only (weak inversion) [15]. The application of this approximation to (8) results [ 15] in: (9) Integration of (9) is straightforward, the result being known as Brews' charge-sheet model [14]. Most advanced surface potential models [3,4] introduce an additional approximation, substituting the depletion charge density term with the first two term of the Taylor expansion around a certain value of the surface potential e. The charge sheet current expression is then written in terms of the surface potential values at the boundaries of the channel as follows [11]: …”

Section: Pao and Sah Exact I-v Modelmentioning

confidence: 98%

“…Integrating (1) along the channel, from source to drain, [11,12] yields: Differentiating (6) with respect to 0, we obtain [13,15] (2) where L is the channel length. Expression (2) is very general and includes both the drift and diffusion mechanisms, thus giving an exact model of the classical (as opposed to quantum mechanical) long channel MOSFET.…”

Section: Pao and Sah Exact I-v Modelmentioning

confidence: 99%

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Fundamentals of Next Generation Compact MOSFET Models

Galup-Montoro¹,

Schneider²,

Pahim³

2005

2005 18th Symposium on Integrated Circuits and Systems Design

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It has recently become clear that the electronics industry is turning away from source-referenced, threshold voltage based MOSFET models. The two main approaches as candidates to replace BSIMtype models are inversion-charge and surface-potential models. This paper provides an overview of the basic physics that must be modeled to build a compact model for the MOSFET and compares the two approaches taken by the developers of next generation models.

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Section: Pao and Sah Exact I-v Modelmentioning

confidence: 95%

Section: Pao and Sah Exact I-v Modelmentioning

confidence: 98%

Section: Pao and Sah Exact I-v Modelmentioning

confidence: 99%

See 1 more Smart Citation

Fundamentals of Next Generation Compact MOSFET Models

Galup-Montoro¹,

Schneider²,

Pahim³

2005

2005 18th Symposium on Integrated Circuits and Systems Design

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“…18͒ and later extended by Brews in 1978 and Van de Wiele in 1979. 19,20 In this simple model the field-effect transistor is treated as a plate capacitor. All charges are assumed to be immediately at the interface of the dielectric so that the thickness of the accumulation layer is zero.…”

Section: Model Of Unipolar and Ambipolar Tftsmentioning

confidence: 99%

Ambipolar charge transport in microcrystalline silicon thin-film transistors

Knipp¹,

Chan²,

Gordijn³

et al. 2011

Journal of Applied Physics

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Hydrogenated microcrystalline silicon ͑c-Si: H͒ is a promising candidate for thin-film transistors ͑TFTs͒ in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on c-Si: H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the c-Si: H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm 2 / V s and 10-15 cm 2 / V s, respectively. In this work, the electrical characteristics of the ambipolar c-Si: H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar c-Si: H TFTs.

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“…The Pao-Sah model [32][33][34][35] describes the MOSFET structure very well, and the introduction into this model of the charge sheet approximation of the inversion layer, is making the model not only accurate but simple. In addition, the charge sheet model [28,36] is the best basis for understanding the long channel device [37][38][39][40][41][42].…”

Section: Mos Field Effect Transistor Mosfetmentioning

confidence: 99%

Surface effects in segmented silicon sensors

Schwandt

Fretwurst

Garutti

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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PROF. DR. MICHAEL POTTHOFFii "Τὸν δὲ νοῦ καί ἐπιστήμης ἐραστὴν ἀνάγκη τὰς τῆς ἔμφρονος φύσεως αἰτίας πρώ-τας μεταδιώκειν." Πλάτωνος, Τίμαιος, Κεφ. 16 "The lover of reason and knowledge must first seek for the causes which belong to the rational order."Plato, Timaeus, Ch. 16 iii To my parents. . . iv AbstractSilicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface.In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

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A long-channel MOSFET model

Cited by 96 publications

References 6 publications

Fundamentals of Next Generation Compact MOSFET Models

Fundamentals of Next Generation Compact MOSFET Models

Ambipolar charge transport in microcrystalline silicon thin-film transistors

Surface effects in segmented silicon sensors

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