A Logic Nanotechnology Featuring Strained-Silicon

Thompson, Scott E.; Armstrong, M.; Auth, C.; Cea, S.; Chau, R.; Glass, G.; Hoffman, T.; Klaus, J. W.; Ma, Zhenqiang; McIntyre, B.; Murthy, A.; Obradovic, B.; Shifren, L.; Sivakumar, S.; Tyagi, S.; Ghani, T.; Mistry, K.; Bohr, M.; El-Mansy, Y.A.

doi:10.1109/led.2004.825195

Cited by 480 publications

(191 citation statements)

References 12 publications

Supporting

Mentioning

188

Contrasting

Unclassified

Order By: Relevance

“…Moore's law [216] with recent advances such as strained silicon [217][218] and copper interconnects [219] helping to extend device scaling. Nevertheless, even with all of the recent research breakthroughs, low-k dielectrics have remained a constant impediment to the ITRS roadmap and ultimately threaten to restrict future device speeds (and dimensional scaling) [150].…”

Section: Low-k Dielectrics/proton Gated Devicesmentioning

confidence: 99%

Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: From molecules to devices

Farrell

Petkov²,

Morris

et al. 2010

Journal of Colloid and Interface Science

View full text Add to dashboard Cite

Self-assembled nanoscale porous architectures, such as mesoporous silica films (MPS), block copolymer films (BCP) and porous anodic aluminas (PAAs), are ideal hosts for templating one dimension (1 D) nano-entities for a wide range of electronic, photonic, magnetic and environmental applications. All three templates offer dimensional scalability and tunability over a wide range, with critical pore sizes for each system well below the 20 nm threshold [1][2][3]. Recently, research has progressed towards controlling the pore direction, orientation and long range order of these nanostructures through so called directed self-assembly (DSA). Significantly, the introduction of a wide range of top-down chemically and physically pre-patterning substrates has facilitated the DSA of nanostructures into functional device arrays. The following review begins with an overview of the fundamental aspects of self-assembly and ordering processes during the formation of PAAs, BCPs and MPS films. Special attention is given to the different ways of directing self-assembly, concentrating on properties such as uni-directional alignment, precision placement and registry of the self-assembled structures to hierarchal or top down architectures. Finally, to distinguish this review from other articles we focus on research where nanostructures have been utilised in part to fabricate arrays of functioning devices below the sub 50 nm threshold, by subtractive transfer and additive methods. Where possible, we attempt to compare and contrast the different templating approaches and highlight the strengths and/or limitations that will be important for their potential integration into downstream processes. ACCEPTED MANUSCRIPT 3 SECTION 1.0: SELF ASSEMBLY AND NANO-ARCHITETCURESThe diversity of self-assembled nanostructures and more importantly, their precise orientation within a thin film (fixed to a substrate) ultimately determines their function and overall application. A large population of research reports to date have focused on identifying these orientations and related periodicities, using x-ray and microscopy tools, as well the development of methods for readily manipulating nanostructures, such as pre-patterning of silicon substrates for the alignment of block copolymers (BCPs) [4] and mesoporous thin films (MTFs) [5] and altering the growth direction of porous anodic alumina (PAA) templates [6]. In this section, a brief synopsis of the mechanisms behind the self-assembly/organisation of each system and highlight nanoscale architectures (and orientations), which are important from a device perspective. Templated mesoporous thin filmsOrdered mesoporous powders were first discovered by researchers at the Mobil Petrochemical Corporation in 1992 and shortly after, sol-gel derived mesoporous silica films were fabricated [1,7].The first series of ordered mesoporous films were reported by Yang et al. in 1996 [8], prepared using initial surfactant concentrations above their critical micelle concentration (CMC). However the films prepared fil...

show abstract

Section: Low-k Dielectrics/proton Gated Devicesmentioning

confidence: 99%

Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: From molecules to devices

Farrell

Petkov²,

Morris

et al. 2010

Journal of Colloid and Interface Science

View full text Add to dashboard Cite

show abstract

“…The strain changes the electronic band structure resulting in the change of carrier mobility [1][2][3][4][5]. While the electrostatics of strained MOSFETs has been studied, several research groups have reported the mobility characteristic in strained MOSFETs [1,6] or in unstrained MOSFETs [7,8].…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs

Sun¹,

Shin²

2014

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

show abstract

“…As a complimentary technique, Si 1-x Ge x alloys and C-doped Si (Si:C) have been introduced in advanced complimentary metal-semiconductor-oxide (CMOS) to control strain in Si for channel mobility enhancement. [1][2][3][4][5][6][7][8] Device miniaturization by conventional scaling and performance enhancement through introduction of new materials and structures will certainly continue.…”

Section: Introductionmentioning

confidence: 99%

In-line Si1-xGex epitaxial process monitoring and diagnostics using multiwavelength high resolution micro-Raman spectroscopy

et al. 2012

View full text Add to dashboard Cite

Multiwavelength, high resolution micro-Raman spectroscopy was applied to in-line process monitoring and diagnostics of undoped and B-doped Si1-xGex epitaxy on Si(100) device wafers. This noncontact technique was used to monitor the Ge content, B concentration and thickness of single and double Si1-xGex epitaxial layers. Epitaxial process problems were diagnosed nondestructively. Raman peak positions and full-width-at-half-maximum of the Si-Si peak(s) from the Si1-xGex epitaxial layer(s) and Si substrates, in the wavenumber range of 475 ∼ 535 cm-1, were monitored under ultraviolet and visible excitation wavelengths. The Ge content, B concentration and Si1-xGex epitaxial film structures were verified by secondary ion mass spectroscopy (SIMS) depth profiling results. In-line monitoring of Si-Si and Si Raman peaks is very effective in noncontact material property characterization, epitaxial process optimization, and quality control applications

show abstract

A Logic Nanotechnology Featuring Strained-Silicon

Cited by 480 publications

References 12 publications

Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: From molecules to devices

Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: From molecules to devices

Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs

In-line Si1-xGex epitaxial process monitoring and diagnostics using multiwavelength high resolution micro-Raman spectroscopy

Contact Info

Product

Resources

About