A Linear InGaP/GaAs HBT Power Amplifier Using Parallel-Combined Transistors With IMD3 Cancellation

Baek, Seung Eun; Ahn, Hyunjin; Nam, Ilku; Ryu, Nam-Sik; Lee, Hui Dong; Park, Bonghyuk; Lee, Ockgoo

doi:10.1109/lmwc.2016.2615361

Cited by 24 publications

(15 citation statements)

References 4 publications

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“…However, the results show similar trend which is by varying the bias values, the improvements in IMD3 and hence in linearity can be obtained. Table 1 provides comparison of the work with various PA linearized with other state-of-the-art analog techniques 8,[12][13][14][15][16][17][18][19][20] . The measurement results show improvement by 20 dBc for 0.9 GHz for GaN HEMT circuit using multi gates devices for four parallel FETs.…”

Section: Measurement Resultsmentioning

confidence: 99%

Computer‐aided design methodology for linearity enhancement of multiwatt GaN HEMT amplifiers using multiple parallel devices

Saini

Ezzeddine

Joudeh

et al. 2019

Int J RF Microw Comput Aided Eng

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This article presents a design methodology for linearizing GaN HEMT amplifiers based on splitting a large FET into multiple parallel FETs with same total gate periphery and by biasing them individually. By varying the biases, the magnitude and the phase of the IMD3 components at the output of FET changes. A detailed simulation methodology using commercial microwave CAD software is presented. Simulation results show that by biasing one device in Class AB and other(s) in deep Class AB mode, IMD3 components of parallel FETs can be made out of phase to each other leading to cancellation and improvement in linearity. Three prototype circuits were simulated using (a) a single 5 mm FET (1 × 5 mm), (b) two parallel 2.5 mm FETs (2 × 2.5 mm), and (c) four parallel 1.25 mm FETs (4 × 1.25 mm), for a total gate periphery of 5 mm, over the frequency range of 0.8 to 1.0 GHz. IMD3 improvement up to 20 dBc was achieved with the 4 × 1.25 mm circuit when the FET biases were optimized. Measurement results show improvement in linearity up to 20 dBc for 4 × 1.25 mm circuit. The proposed method improves linearity without a substantial penalty on the power consumption and is straightforward to implement. K E Y W O R D Sgallium nitride, IMD3, linearization, nonlinearity, phase cancellation, power amplifier

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Section: Measurement Resultsmentioning

confidence: 99%

Computer‐aided design methodology for linearity enhancement of multiwatt GaN HEMT amplifiers using multiple parallel devices

Saini

Ezzeddine

Joudeh

et al. 2019

Int J RF Microw Comput Aided Eng

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show abstract

“…A bypass circuit with R b1 and C b1 is added to the unit transistor to compensate for the decrease in the base bias voltage [23]. Change in R b , R b1 , and C b1 causes a significant change in the phases of the IMD3 current components but do not cause a significant change in the phases of the fundamental current components [2]. The two PAs (PA1 and PA2) are connected through the single-and two-winding transformer, and different values for R b , R b1 , and C b1 are selected to cancel the IMD3 current components from PA1 and PA2.…”

Section: Imd3 Cancellation With Single-and Two-winding Transformermentioning

confidence: 99%

“…Therefore, various linearization methods for HBT PA designs have been proposed to improve the linear output power. To compensate for nonlinear distortion, active bias circuits are widely used for typical HBT PA designs [2], [18], [21]- [24]. A dynamic feedback Darlington circuit has been proposed in [25].…”

Section: Introductionmentioning

confidence: 99%

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Highly Efficient HBT Power Amplifier Using High-Q Single- and Two-Winding Transformer With IMD3 Cancellation

Ahn

Nam

et al. 2021

IEEE Access

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This paper presents a highly efficient InGaP/GaAs HBT power amplifier (PA) implemented using a proposed high-Q single-and two-winding transformer. A single-and two-winding transformer is designed with a printed circuit board (PCB) to combine the output power with a reduced passive loss. Compared to a typical 1:2 two-winding transformer, an additional unit amplifier is connected at the midpoint of the secondary winding to construct a single-winding transformer without additional windings. An IMD3 cancellation technique using a single-and two-winding transformer is also proposed to obtain a high linear output power with high power-added efficiency (PAE) without additional design circuitry. The IMD3 components of the two input currents in the single-and two-winding transformer are 180° out-of-phase cancelling each other at output. The proposed PA is integrated with an InGaP/GaAs HBT process using a PCB transformer. The experimental results demonstrate that the PA achieves a saturated output power of 33.3 dBm, with a PAE of 61.3% at 0.91 GHz. The proposed PA is also tested with an orthogonal frequency-division multiplexing (OFDM) 64-quadrature amplitude modulation (QAM) signal having a bandwidth of 10 MHz and peak-to-average power ratio (PAPR) of 7.8 dB at 0.91 GHz to evaluate the improvement in linearity. The PA achieves an adjacent channel leakage ratio (ACLR) of −42 dBc up to an output power of 26.0 dBm with a PAE of 26.8% and current consumption of 297 mA.

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“…The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor which has been broadly used in radio frequency (RF), microwave and even millimeter wave applications, because of its superior capability in both highspeed and large-current driving. [1][2][3] An accurate small signal equivalent circuit models of HBT greatly vital to circuit design, process technology evaluation and device model optimization. 4,5 However, with the increase of frequency, it remains a lot of parasitic effects in HBT devices which may affect the device performance.…”

Section: Introductionmentioning

confidence: 99%

An improved small signal model of InP HBT for millimeter‐wave applications

Zhang

Gao

2021

Micro & Optical Tech Letters

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In this letter, an improved small‐signal equivalent circuit model of InP heterojunction bipolar transistors (HBTs) for millimeter‐wave applications is presented. The proposed small‐signal model takes into account the parasitic effect in the collector part which can effectively improve the accuracy of S parameter. In the frequency range of 2–110 GHz, good agreements between the measured and model‐calculated data can be achieved to demonstrate good modeling accuracy.

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A Linear InGaP/GaAs HBT Power Amplifier Using Parallel-Combined Transistors With IMD3 Cancellation

Cited by 24 publications

References 4 publications

Computer‐aided design methodology for linearity enhancement of multiwatt GaN HEMT amplifiers using multiple parallel devices

Computer‐aided design methodology for linearity enhancement of multiwatt GaN HEMT amplifiers using multiple parallel devices

Highly Efficient HBT Power Amplifier Using High-Q Single- and Two-Winding Transformer With IMD3 Cancellation

An improved small signal model of InP HBT for millimeter‐wave applications

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