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2017
DOI: 10.1109/ted.2017.2648861
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A Linear Equivalent Circuit Model for Depletion-Type Silicon Microring Modulators

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Cited by 23 publications
(16 citation statements)
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“…However, we find there are still certain problems in practice with Verilog-A modeling, such as the simulation process being prone to non-convergence and the inability to describe complex signals [138]. The SPICE models can also be used to describe the physical properties of photonic devices [139,205,208,209]. It is shown that the description of the physical properties of a specific photonic device can be achieved through a simple RLC network, resulting in high simulation efficiency.…”
Section: Statusmentioning
confidence: 99%
“…However, we find there are still certain problems in practice with Verilog-A modeling, such as the simulation process being prone to non-convergence and the inability to describe complex signals [138]. The SPICE models can also be used to describe the physical properties of photonic devices [139,205,208,209]. It is shown that the description of the physical properties of a specific photonic device can be achieved through a simple RLC network, resulting in high simulation efficiency.…”
Section: Statusmentioning
confidence: 99%
“…Having an accurate MRM model is essential for optimizing the design of the driver and the circuitry for wavelength stabilization during operation. There are several MRM models have been established according to coupledmode theory [2][3][4][5][6][7]. However, these models exist shortcomings.…”
Section: Introductionmentioning
confidence: 99%
“…However, these models exist shortcomings. Some have ignored the self-heating effect [2][3][4][5], while others neglect electrical parasitics [6,7]. Due to the inadequate representation of the MRM behavior, the transmitter performance is adversely affected.…”
Section: Introductionmentioning
confidence: 99%
“…Similarly, compact photonic device models are also helpful for large-scale PIC design [54]. Active photonic device models with electrical and optical dynamics can strongly benefit the design of high-speed transceiver circuits [55][56][57][58][59][60][61][62][63][64][65]. Compared to p-i-n photodiode receivers, APD receivers require more complex bias circuits due to the bias-dependent multiplication gain of APDs and the required high bias voltage.…”
Section: Introductionmentioning
confidence: 99%